System processing a substrate using dynamic liquid meniscus

ABSTRACT

A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional of and claims priority from U.S. patentapplication Ser. No. 11/318,019, filed on Dec. 22, 2005, now U.S. Pat.No. 7,127,831, which is a continuation of U.S. application Ser. No.10/404,692, filed March 31, 2003, now U.S. Pat. No. 6,988,327, issued onJan. 24, 2006, which is a continuation-in-part and claims priority fromU.S. patent application Ser. No. 10/330,843 filed on Dec. 24, 2002, nowU.S. Pat. No. 7,198,055, and entitled “Meniscus, Vacuum, IPA Vapor,Drying Manifold,” which is a continuation-in-part of U.S. patentapplication Ser. No. 10/261,839 filed on Sep. 30, 2002 now U.S. Pat. No.7,234,477, and entitled “Method and Apparatus for Drying SemiconductorWafer Surfaces Using a Plurality of Inlets and Outlets Held in CloseProximity to the Wafer Surfaces,” both of which are incorporated hereinby reference in its entirety. This application is related to U.S. patentapplication Ser. No. 10/330,897 filed on Dec. 24, 2002, entitled “Systemfor Substrate Processing with Meniscus, Vacuum, IPA vapor, DryingManifold” and is also related to U.S. Pat. No. 7,069,937, issued on Jul.4, 2006, entitled “Vertical Proximity Processor.” The aforementionedpatents and applications are hereby incorporated by reference in theirentirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to semiconductor manufacturingprocesses, and more particularly, to methods and systems for efficientlymoving fluids from one surface to another.

2. Description of the Related Art

In the semiconductor chip fabrication process, it is well known thatthere is a need to clean and dry a wafer where a fabrication operationhas been performed that leaves unwanted residues on the surfaces ofwafers. Examples of such a fabrication operation include plasma etching(e.g., tungsten etch back (WEB)) and chemical mechanical polishing(CMP). In CMP, a wafer is placed in a holder that pushes a wafer surfaceagainst a polishing surface. The polishing surface uses a slurry whichconsists of chemicals and abrasive materials to cause the polishing.Unfortunately, this process tends to leave an accumulation of slurryparticles and residues at the wafer surface. If left on the wafer, theunwanted residual material and particles may cause, among other things,defects such as scratches on the wafer surface and inappropriateinteractions between metallization features. In some cases, such defectsmay cause devices on the wafer to become inoperable. In order to avoidthe undue costs of discarding wafers having inoperable devices, it istherefore necessary to clean the wafer adequately yet efficiently aftera fabrication operation that leaves unwanted residues.

After a wafer has been wet cleaned, the wafer must be dried effectivelyto prevent water or cleaning fluid remnants from leaving residues on thewafer. If the cleaning fluid on the wafer surface is allowed toevaporate, as usually happens when droplets form, residues orcontaminants previously dissolved in the cleaning fluid will remain onthe wafer surface after evaporation (e.g., and form spots). To preventevaporation from taking place, the cleaning fluid must be removed asquickly as possible without the formation of droplets on the wafersurface. In an attempt to accomplish this, one of several differentdrying techniques are employed such as spin-drying, IPA, or Marangonidrying. All of these drying techniques utilize some form of a movingliquid/gas interface on a wafer surface, which, if properly maintained,results in drying of a wafer surface without the formation of droplets.Unfortunately, if the moving liquid/gas interface breaks down, as oftenhappens with all of the aforementioned drying methods, droplets form andevaporation occurs resulting in contaminants being left on the wafersurface.

The most prevalent drying technique used today is spin rinse drying(SRD). FIG. 1 illustrates movement of cleaning fluids on a wafer 10during an SRD drying process. In this drying process, a wet wafer isrotated at a high rate by rotation 14. In SRD, by use of centrifugalforce, the water or cleaning fluid used to clean the wafer is pulledfrom the center of the wafer to the outside of the wafer and finally offof the wafer as shown by fluid directional arrows 16. As the cleaningfluid is being pulled off of the wafer, a moving liquid/gas interface 12is created at the center of the wafer and moves to the outside of thewafer (i.e., the circle produced by the moving liquid/gas interface 12gets larger) as the drying process progresses. In the example of FIG. 1,the inside area of the circle formed by the moving liquid/gas interface12 is free from the fluid and the outside area of the circle formed bythe moving liquid/gas interface 12 is the cleaning fluid. Therefore, asthe drying process continues, the section inside (the dry area) of themoving liquid/gas interface 12 increases while the. area (the wet area)outside of the moving liquid/gas interface 12 decreases. As statedpreviously, if the moving liquid/gas interface 12 breaks down, dropletsof the cleaning fluid form on the wafer and contamination may occur dueto evaporation of the droplets. As such, it is imperative that dropletformation and the subsequent evaporation be limited to keep contaminantsoff of the wafer surface. Unfortunately, the present drying methods areonly partially successful at the prevention of moving liquid interfacebreakdown.

In addition, the SRD process has difficulties with drying wafer surfacesthat are hydrophobic. Hydrophobic wafer surfaces can be difficult to drybecause such surfaces repel water and water based (aqueous) cleaningsolutions. Therefore, as the drying process continues and the cleaningfluid is pulled away from the wafer surface, the remaining cleaningfluid (if aqueous based) will be repelled by the wafer surface. As aresult, the aqueous cleaning fluid will want the least amount of area tobe in contact with the hydrophobic wafer surface. Additionally, theaqueous cleaning solution tends cling to itself as a result of surfacetension (i.e., as a result of molecular hydrogen bonding). Therefore,because of the hydrophobic interactions and the surface tension, balls(or droplets) of aqueous cleaning fluid forms in an uncontrolled manneron the hydrophobic wafer surface. This formation of droplets results inthe harmful evaporation and the contamination discussed previously. Thelimitations of the SRD are particularly severe at the center of thewafer, where centrifugal force acting on the droplets is the smallest.Consequently, although the SRD process is presently the most common wayof wafer drying, this method can have difficulties reducing formation ofcleaning fluid droplets on the wafer surface especially when used onhydrophobic wafer surfaces.

Therefore, there is a need for a method and an apparatus that avoids theprior art by allowing quick and efficient cleaning and drying of asemiconductor wafer, but at the same time reducing the formation ofnumerous water or cleaning fluid droplets that may cause contaminationto deposit on the wafer surface. Such deposits as often occurs todayreduce the yield of acceptable wafers and increase the cost ofmanufacturing semiconductor wafers.

SUMMARY OF THE INVENTION

Broadly speaking, the present invention fills these needs by providing asystem and method for moving a meniscus from a first surface to a secondsurface. It should be appreciated that the present invention can beimplemented in numerous ways, including as a process, an apparatus, asystem, computer readable media, or a device. Several inventiveembodiments of the present invention are described below.

One embodiment includes a method of moving a meniscus from a firstsurface to a second surface includes forming a meniscus between a headand a first surface. The meniscus can be moved from the first surface toan adjacent second surface, the adjacent second surface being parallelto the first surface. Moving the meniscus parallel to the first surfaceto the adjacent second surface can include moving the meniscus such thata first portion of the meniscus is supported between a first portion ofthe head and the first surface and a second portion of the meniscus issupported between a second portion of the head and a second surface.

The meniscus can also be moved from the second surface and onto thefirst surface. Moving the meniscus from the second surface and onto thefirst surface substantially removes a liquid that forms the meniscusfrom the second surface. The meniscus can also be allowed to rupture(e.g., burst) when the meniscus is fully removed from the secondsurface.

The second surface can be substantially co-planar with the firstsurface. Forming the meniscus between the head and the first surface canalso include moving the head to a position proximate to the firstsurface. Forming the meniscus between the head and the first surface canalso include injecting a selected liquid from a first port in the headand applying a vacuum from a second port in the head.

The first surface can be an edge platform and the second surface can bea substrate. The edge platform can surround at least a portion of thesubstrate. The head can be wider than a radius of the substrate.Alternatively, the head can be wider than a full diameter of thesubstrate.

The second surface can be separated from the first surface by a gap. Thesecond surface can also be moved relative to the first surface. Thesecond surface can be rotated relative to the first surface. A materialof at least one of the first surface, the second surface and the headcan be selected to optimize a surface tension gradient.

Another embodiment includes system for moving a meniscus from a firstsurface to a second surface and includes a first surface and a secondsurface that is substantially co-planar with the first surface. Amovable head is also included. The head can be moved in a firstdirection substantially perpendicular toward the first surface and thesecond surface and also can be moved in a second direction substantiallyparallel to the first surface and the second surface.

The first surface can include an edge platform and the second surfacecan be a substrate. The edge platform can also substantially surroundthe substrate. The head can be wider than a radius of the substrate.Alternatively, the head can be wider than a diameter of the substrate.

The second surface can be separated from the first surface by a gap. Thesecond surface can also be moving relative to the first surface. Thesecond surface can also be rotating relative to the first surface. Amaterial of at least one of the first surface, the second surface andthe head can be selected to optimize a surface tension gradient.

Another embodiment includes a method of optimizing surface tensiongradient that includes selecting a first material for a first surface,selecting a second material for a second surface, the first materialhaving a different hydrophilic property than the second material, andforming a meniscus between the first surface and the second surface. Thefirst surface can be a head and the second surface can be a substrate. Athird material can be selected for a third surface, the third surfacehaving a different hydrophilic property than at least one of the firstsurface and the second surface. The third surface can be an edgeplatform.

Another embodiment includes a system having an optimized surface tensiongradient. The system includes a first surface that includes a firstmaterial, a second surface that includes a second material. The firstmaterial having a different hydrophilic property than the secondmaterial, the first surface being substantially parallel and proximateto the second surface. The first surface can be a head. The secondsurface can be a substrate. A third surface can also be included. Thethird surface can include a third material. The third surface can have adifferent hydrophilic property than at least one of the first surfaceand the second surface. The third surface can be an edge platform.

Another embodiment includes a method of processing an edge of asubstrate. The method can include forming a meniscus inside a concaveportion of a head. The concave portion being capable of receiving atleast a portion of an edge of the substrate. The meniscus can be movedonto the edge of the substrate such that a leading edge of the meniscusis split into a first leading edge and a second leading edge. The firstleading edge can be supported between a top surface of the substrate andcorresponding top inside surface of the head. The second leading edgecan be supported between a bottom surface of the substrate andcorresponding bottom inside surface of the head.

The meniscus can also be moved off of the edge of the substrate suchthat the first leading edge and the second leading edge combine toreform the leading edge of the meniscus. Moving the meniscus can includemoving the meniscus relative to the edge of the substrate. Moving themeniscus can also include increasing the size of the meniscus.

The edge of the substrate can also include a circumferential edge of thesubstrate and the meniscus can be formed in an arc around at least aportion of the circumference of the substrate. The meniscus canencompass the edge within the portion of the circumference of thesubstrate. The meniscus can encompass at least one of a top surface edgeexclusion zone and a bottom surface edge exclusion zone.

The meniscus can extend a different distance along the top insidesurface of the head than along the bottom inside surface of the head.The edge of the substrate can move relative to the head such that themeniscus is moved along the edge of the substrate.

Another embodiment includes a system for processing an edge of asubstrate. The system includes a head. The head includes a concaveportion capable of receiving an edge of a substrate. The concave portionalso includes multiple ports including a process liquid injection port,two or more vacuum ports, and at least one surface tension control port.The edge of the substrate can also include a circumferential edge of thesubstrate and the arc-shaped head can be formed in an arc around atleast a portion of the circumference of the substrate.

The various embodiments of the present invention provide the advantageof moving an intact meniscus from a first surface (i.e., an edgeplatform) to a second surface (e.g., a substrate, a wafer). The intactmeniscus can also be moved off of the second surface to the firstsurface and then the meniscus can be allowed to burst or be disabled.Disabling the meniscus off of the second surface ensures that thebursting meniscus will not leave droplets of the liquids that form themeniscus on the second surface.

Another advantage is that an edge of the substrate can be processed(e.g., cleaned, etched) through use of an edge-shaped head that cansupport a meniscus around the edge of the substrate.

In another advantage, the materials of the head, edge platform, andsubstrate can be selected for their respective hydrophilic orhydrophobic properties so as to increase the surface tension gradientfor supporting the meniscus between and on the head, edge platform, andsubstrate.

Other aspects and advantages of the invention will become apparent fromthe following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the principles ofthe invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be readily understood by the followingdetailed description in conjunction with the accompanying drawings, andlike reference numerals designate like structural elements.

FIG. 1 illustrates movement of cleaning fluids on a wafer during an SRDdrying process.

FIG. 2A shows a wafer cleaning and drying system in accordance with oneembodiment of the present invention.

FIG. 2B shows an alternate view of the wafer cleaning and drying systemin accordance with one embodiment of present invention.

FIG. 2C illustrates a side close-up view of the wafer cleaning anddrying system holding a wafer in accordance with one embodiment of thepresent invention.

FIG. 2D shows another side close-up view of the wafer cleaning anddrying system in accordance with one embodiment of the presentinvention.

FIG. 3A shows a top view illustrating the wafer cleaning and dryingsystem with dual proximity heads in accordance with one embodiment ofthe present invention.

FIG. 3B illustrates a side view of the wafer cleaning and drying systemwith dual proximity heads in accordance with one embodiment of thepresent invention.

FIG. 4A shows a top view of a wafer cleaning and drying system whichincludes multiple proximity heads for a particular surface of the waferin accordance with one embodiment of the present invention.

FIG. 4B shows a side view of the wafer cleaning and drying system whichincludes multiple proximity heads for a particular surface of the waferin accordance with one embodiment of the present invention.

FIG. 5A shows a top view of a wafer cleaning and drying system with aproximity head in a horizontal configuration which extends across adiameter of the wafer 108 in accordance with one embodiment of thepresent invention.

FIG. 5B shows a side view of a wafer cleaning and drying system with theproximity heads in a horizontal configuration which extends across adiameter of the wafer in accordance with one embodiment of the presentinvention.

FIG. 5C shows a top view of a wafer cleaning and drying system with theproximity heads in a horizontal configuration which is configured toclean and/or dry the wafer that is stationary in accordance with oneembodiment of the present invention.

FIG. 5D shows a side view of a wafer cleaning and drying system with theproximity heads in a horizontal configuration which is configured toclean and/or dry the wafer that is stationary in accordance with oneembodiment of the present invention.

FIG. 5E shows a side view of a wafer cleaning and drying system with theproximity heads in a vertical configuration enabled to clean and/or drythe wafer that is stationary in accordance with one embodiment of thepresent invention.

FIG. 5F shows an alternate side view of a wafer cleaning and dryingsystem that is shifted 90 degrees from the side view shown in FIG. 5E inaccordance with one embodiment of the present invention.

FIG. 5G shows a top view of a wafer cleaning and drying system with aproximity head in a horizontal configuration which extends across aradius of the wafer in accordance with one embodiment of the presentinvention.

FIG. 5H shows a side view of a wafer cleaning and drying system with theproximity heads and in a horizontal configuration which extends across aradius of the wafer in accordance with one embodiment of the presentinvention.

FIG. 5 i shows a wafer cleaning and drying system in accordance with oneembodiment of the present invention.

FIGS. 5J-5L show side views of the wafer cleaning and drying system asthe proximity heads move the meniscus from the surfaces of the wafer tothe adjacent edge platform in accordance with one embodiment of thepresent invention.

FIG. 5M shows a wafer cleaning and drying system in accordance with oneembodiment of the present invention.

FIG. 5N shows a wafer cleaning and drying system in accordance with oneembodiment of the present invention.

FIG. 5N-1 is a flowchart diagram of the method operations of using awafer cleaning and drying systems in accordance with one embodiment ofthe present invention.

FIG. 5N-2 is a detailed cross-sectional view of the edge platform inaccordance with one embodiment of the present invention.

FIG. 6A shows a proximity head inlet/outlet orientation that may beutilized to clean and dry the wafer in accordance with one embodiment ofthe present invention.

FIG. 6B shows another proximity head inlet/outlet orientation that maybe utilized to clean and dry the wafer in accordance with one embodimentof the present invention.

FIG. 6C shows a further proximity head inlet/outlet orientation that maybe utilized to clean and dry the wafer in accordance with one embodimentof the present invention.

FIG. 6D illustrates a preferable embodiment of a wafer drying processthat may be conducted by a proximity head in accordance with oneembodiment of the present invention.

FIG. 6E shows another wafer drying process using another sourceinlet/outlet orientation that may be conducted by a proximity head inaccordance with one embodiment of the present invention.

FIG. 6F shows another source inlet and outlet orientation where anadditional source outlet may be utilized to input an additional fluid inaccordance with one embodiment of the present invention.

FIG. 7A illustrates a proximity head performing a drying operation inaccordance with one embodiment of the present invention.

FIG. 7B shows a top view of a portion of a proximity head in accordancewith one embodiment of the present invention.

FIG. 7C illustrates a proximity head with angled source inletsperforming a drying operation in accordance with one embodiment of thepresent invention.

FIG. 7D illustrates a proximity head with angled source inlets andangled source outlets performing a drying operation in accordance withone embodiment of the present invention.

FIG. 8A illustrates a side view of the proximity heads for use in a dualwafer surface cleaning and drying system in accordance with oneembodiment of the present invention.

FIG. 8B shows the proximity heads in a dual wafer surface cleaning anddrying system in accordance with one embodiment of the presentinvention.

FIG. 9A illustrates a processing window in accordance with oneembodiment of the present invention.

FIG. 9B illustrates a substantially circular processing window inaccordance with one embodiment of the present invention.

FIG. 9C illustrates a processing window in accordance with oneembodiment of the present invention.

FIG. 9D illustrates a processing window in accordance with oneembodiment of the present invention.

FIG. 10A shows an exemplary process window with the plurality of sourceinlets and as well as the plurality of source outlets in accordance withone embodiment of the present invention.

FIG. 10B shows processing regions of a proximity head in accordance withone embodiment of the present invention.

FIG. 11A shows a top view of a proximity head with a substantiallyrectangular shape in accordance with one embodiment of the presentinvention.

FIG. 11B illustrates a side view of the proximity head in accordancewith one embodiment of present invention.

FIG. 11C shows a rear view of the proximity head in accordance with oneembodiment of the present invention.

FIG. 12A shows a proximity head with a partial rectangular and partialcircular shape in accordance with one embodiment of the presentinvention.

FIG. 12B shows a side view of the proximity head with a partialrectangular and partial circular shape in accordance with one embodimentof the present invention.

FIG. 12C shows a back view of the proximity head with a partialrectangular and partial circular shape in accordance with one embodimentof the present invention.

FIG. 13A shows a rectangular proximity head in accordance with oneembodiment of the present invention.

FIG. 13B shows a rear view of the proximity head in accordance with oneembodiment of the present invention.

FIG. 13C illustrates a side view of the proximity head in accordancewith one embodiment of present invention.

FIG. 14A shows a rectangular proximity head in accordance with oneembodiment of the present invention.

FIG. 14B shows a rear view of the rectangular proximity head inaccordance with one embodiment of the present invention.

FIG. 14C illustrates a side view of the rectangular proximity head inaccordance with one embodiment of present invention.

FIG. 15A shows a proximity head in operation according to one embodimentof the present invention.

FIG. 15B illustrates the proximity head as described in FIG. 15A withIPA input in accordance with one embodiment of the present invention.

FIG. 15C shows the proximity head as described in FIG. 15B, but with theIPA flow increased to 24 SCFH in accordance with one embodiment of thepresent invention.

FIG. 15D shows the proximity head where the fluid meniscus is shownwhere the wafer is being rotated in accordance with one embodiment ofthe present invention.

FIG. 15E shows the proximity head where the fluid meniscus is shownwhere the wafer is being rotated faster than the rotation shown in FIG.15D in accordance with one embodiment of the present invention.

FIG. 15F shows the proximity head where the IPA flow has been increasedas compared to the IPA flow of FIG. 15D in accordance with oneembodiment of the present invention.

FIG. 16A shows a layout view of the edge processing system, inaccordance with one embodiment of the present invention.

FIG. 16B shows a side view of the edge processing system, in accordancewith one embodiment of the present invention.

FIGS. 16C and 16D show a cutaway side view of the edge process proximityhead in accordance with one embodiment of the present invention.

FIG. 16E shows a 16E-16E sectional view of edge process proximity head,in accordance with one embodiment of the present invention.

DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

Several exemplary embodiments for methods and apparatuses for cleaningand/or drying a wafer will now be described. In the followingdescription, numerous specific details are set forth in order to providea thorough understanding of the present invention. It will beunderstood, however, by one of ordinary skill in the art, that thepresent invention may be practiced without some or all of these specificdetails. In other instances, well known process operations have not beendescribed in detail in order not to unnecessarily obscure the presentinvention.

While this invention has been described in terms of several preferredembodiments, it will be appreciated that those skilled in the art uponreading the preceding specifications and studying the drawings willrealize various alterations, additions, permutations and equivalentsthereof. It is therefore intended that the present invention includesall such alterations, additions, permutations, and equivalents as fallwithin the true spirit and scope of the invention.

FIGS. 2A through 2D below illustrate embodiments of an exemplary waferprocessing system. It should be appreciated that the system isexemplary, and that any other suitable type of configuration that wouldenable movement of the proximity head(s) into close proximity to thewafer may be utilized. In the embodiments shown, the proximity head maymove in a linear fashion from a center portion of the wafer to the edgeof the wafer. It should be appreciated that other embodiments may beutilized where the proximity head(s) move in a linear fashion from oneedge of the wafer to another diametrically opposite edge of the wafer,or other non-linear movements may be utilized such as, for example, in aradial motion, in a circular motion, in a spiral motion, in a zig-zagmotion, etc. The motion may also be any suitable specified motionprofile as desired by a user. In addition, in one embodiment, the wafermay be rotated and the proximity head moved in a linear fashion so theproximity head may process all portions of the wafer. It should also beunderstood that other embodiments may be utilized where the wafer is notrotated but the proximity head is configured to move over the wafer in afashion that enables processing of all portions of the wafer. Inaddition, the proximity head and the wafer cleaning and drying systemdescribed herein may be utilized to clean and dry any shape and size ofsubstrates such as for example, 200 mm wafers, 300 mm wafers, flatpanels, etc. The wafer cleaning and drying system may be utilized foreither or both cleaning and drying the wafer depending on theconfiguration of the system.

FIG. 2A shows a wafer cleaning and drying system 100 in accordance withone embodiment of the present invention. The system 100 includes rollers102 a, 102 b, and 102 c which may hold and rotate a wafer to enablewafer surfaces to be dried. The system 100 also includes proximity heads106 a and 106 b that, in one embodiment, are attached to an upper arm104 a and to a lower arm 104 b respectively. The upper arm 104 a and thelower arm 104 b are part of a proximity head carrier assembly 104 whichenables substantially linear movement of the proximity heads 106 a and106 b along a radius of the wafer.

In one embodiment the proximity head carrier assembly 104 is configuredto hold the proximity head 106 a above the wafer and the proximity head106 b below the wafer in close proximity to the wafer. This may beaccomplished by having the upper arm 104 a and the lower arm 104 b bemovable in a vertical manner so once the proximity heads are movedhorizontally into a location to start wafer processing, the proximityheads 106 a and 106 b can be moved vertically to a position in closeproximity to the wafer. The upper arm 104 a and the lower arm 104 b maybe configured in any suitable way so the proximity heads 106 a and 106 bcan be moved to enable wafer processing as described herein. It shouldbe appreciated that the system 100 may be configured in any suitablemanner as long as the proximity head(s) may be moved in close proximityto the wafer to generate and control a meniscus as discussed below inreference to FIGS. 6D through 8B. It should also be understood thatclose proximity may be any suitable distance from the wafer as long as ameniscus as discussed in further reference to FIG. 6D through 8B may bemaintained. In one embodiment, the proximity heads 106 a and 106 b (aswell as any other proximity head described herein) may each be moved tobetween about 0.1 mm to about 10 mm from the wafer to initiate waferprocessing operations. In a preferable embodiment, the proximity heads106 a and 106 b (as well as any other proximity head described herein)may each be moved to between about 0.5 mm to about 4.5 mm from the waferto initiate wafer processing operations, and in more preferableembodiment, the proximity heads 106 a and 106 b (as well as any otherproximity head described herein) may be moved to about 2 mm from thewafer to initiate wafer processing operations.

FIG. 2B shows an alternate view of the wafer cleaning and drying system100 in accordance with one embodiment of present invention. The system100, in one embodiment, has the proximity head carrier assembly 104 thatis configured to enable the proximity heads 106 a and 106 b to be movedfrom the center of the wafer towards the edge of the wafer. It should beappreciated that the proximity head carrier assembly 104 may be movablein any suitable manner that would enable movement of the proximity heads106 a and 106 b to clean and/or dry the wafer as desired. In oneembodiment, the proximity head carrier assembly 104 can be motorized tomove the proximity head 106 a and 106 b from the center of the wafer tothe edge of the wafer. It should be understood that although the wafercleaning and drying system 100 is shown with the proximity heads 106 aand 106 b, that any suitable number of proximity heads may be utilizedsuch as, for example, 1, 2, 3, 4, 5, 6, etc. The proximity heads 106 aand/or 106 b of the wafer cleaning and drying system 100 may also be anysuitable size or shape as shown by, for example, any of the proximityheads as described herein. The different configurations described hereingenerate a fluid meniscus between the proximity head and the wafer. Thefluid meniscus may be moved across the wafer to clean and dry the waferby applying fluid to the wafer surface and removing the fluids from thesurface. Therefore, the proximity heads 106 a and 106 b can have anynumerous types of configurations as shown herein or other configurationsthat enable the processes described herein. It should also beappreciated that the system 100 may clean and dry one surface of thewafer or both the top surface and the bottom surface of the wafer.

In addition, besides cleaning or drying both the top and bottom surfacesand of the wafer, the system 100 may also be configured to clean oneside of the wafer and dry another side of the wafer if desired byinputting and outputting different types of fluids. It should beappreciated that the system 100 may utilize the application of differentchemicals top and bottom in the proximity heads 106 a and 106 brespectively depending on the operation desired. The proximity heads canbe configured to clean and/or dry the bevel edge of the wafer inaddition to cleaning and/or drying the top and/or bottom of the wafer.This can be accomplished by moving the meniscus off the edge the waferwhich cleans the bevel edge. It should also be understood that theproximity heads 106 a and 106 b may be the same type of apparatus ordifferent types of proximity heads.

FIG. 2C illustrates a side close-up view of the wafer cleaning anddrying system 100 holding a wafer 108 in accordance with one embodimentof the present invention. The wafer 108 may be held and rotated by therollers 102 a, 102 b, and 102 c in any suitable orientation as long asthe orientation enables a desired proximity head to be in closeproximity to a portion of the wafer 108 that is to be cleaned or dried.In one embodiment, the roller 102 b may be rotated by using a spindle111, and the roller 102 c may be held and rotated by a roller arm 109.The roller 102 a may also be rotated by its own spindle (as shown inFIG. 3B. In one embodiment, the rollers 102 a, 102 b, and 102 c canrotate in a clockwise direction to rotate the wafer 108 in acounterclockwise direction. It should be understood that the rollers maybe rotated in either a clockwise or a counterclockwise directiondepending on the wafer rotation desired. In one embodiment, the rotationimparted on the wafer 108 by the rollers 102 a, 102 b, and 102 c servesto move a wafer area that has not been processed into close proximity tothe proximity heads 106 a and 106 b. In an exemplary drying operation,the wet areas of the wafer would be presented to the proximity heads 106a and 106 b through both the linear motion of the proximity heads 106 aand 106 b and through the rotation of the wafer 108. The drying orcleaning operation itself is conducted by at least one of the proximityheads. Consequently, in one embodiment, a dry area of the wafer 108would expand from a center region to the edge region of the wafer 108 ina spiral movement as a drying operation progresses. In a preferableembodiment, the dry area of the wafer 108 would move around the wafer108 and the wafer 108 would be dry in one rotation (if the length of theproximity heads 106 a and 106 b are at least a radius of the wafer 108).By changing the configuration of the system 100 and the orientation ofand movement of the proximity head 106 a and/or the proximity head 106b, the drying movement may be changed to accommodate nearly any suitabletype of drying path.

It should be understood that the proximity heads 106 a and 106 b may beconfigured to have at least one of first source inlet configured toinput deionized water (DIW) (also known as a DIW inlet), at least one ofa second source inlet configured to input isopropyl alcohol (IPA) invapor form (also known as IPA inlet), and at least one source outletconfigured to output fluids from a region between the wafer and aparticular proximity head by applying vacuum (also known as vacuumoutlet). It should be appreciated that the vacuum utilized herein mayalso be suction. In addition, other types of solutions may be inputtedinto the first source inlet and the second source inlet such as, forexample, cleaning solutions, ammonia, HF, etc. It should be appreciatedthat although IPA vapor is used in some of the exemplary embodiments,nitrogen or other inert carrier gas may be used to carry the IPA vapor.Alternatives for IPA include but are not limited to the following:diacetone, diaceton alcohol, 1-methoxy-2-propanol, ethylglycol,methyl-pyrrolidon, ethyllactate, 2-butanol. In addition, any other typeof vapor or gas may be utilized such as for example, nitrogen, argon orother gases, any suitable alcohol vapor, organic compounds, etc. thatmay be miscible with water.

In one embodiment, the at least one IPA vapor inlet is adjacent to theat least one vacuum outlet which is in turn adjacent to the at least oneDIW inlet to form an IPA-vacuum-DIW orientation. It should beappreciated that other types of orientations such as IPA-DIW-vacuum,DIW-vacuum-IPA, vacuum-IPA-DIW, etc. may be utilized depending on thewafer processes desired and what type of wafer cleaning and dryingmechanism is sought to be enhanced. In a preferable embodiment, theIPA-vacuum-DIW orientation may be utilized to intelligently andpowerfully generate, control, and move the meniscus located between aproximity head and a wafer to clean and dry wafers. The DIW inlets, theIPA vapor inlets, and the vacuum outlets may be arranged in any suitablemanner if the above orientation is maintained. For example, in additionto the IPA vapor inlet, the vacuum outlet, and the DIW inlet, in anadditional embodiment, there may be additional sets of IPA vaporoutlets, DIW inlets and/or vacuum outlets depending on the configurationof the proximity head desired. Therefore, another embodiment may utilizean IPA-vacuum-DIW-DIW-vacuum-IPA or other exemplary embodiments with anIPA source inlet, vacuum source outlet, and DIW source inletconfigurations are described herein with a preferable embodiment beingdescribed in reference to FIG. 6D. It should be appreciated that theexact configuration of the IPA-vacuum-DIW orientation may be varieddepending on the application. For example, the distance between the IPAinput, vacuum, and DIW input locations may be varied so the distancesare consistent or so the distances are inconsistent. In addition, thedistances between the IPA input, vacuum, and DIW output may differ inmagnitude depending on the size, shape, and configuration of theproximity head 106 a and the desired size of a process window (i.e.,meniscus shape and size) as described in further detail in reference toFIG. 10. In addition, as discussed in reference to FIG. 10, theIPA-vacuum-DIW orientation is configured so a vacuum regionsubstantially surrounds a DIW region and the IPA region substantiallysurrounds at least the trailing edge region of the vacuum region.

FIG. 2D shows another side close-up view of the wafer cleaning anddrying system 100 in accordance with one embodiment of the presentinvention. In this embodiment, the proximity heads 106 a and 106 b havebeen positioned in close proximity to a top surface 108 a and a bottomsurface 108 b of the wafer 108 respectively by utilization of theproximity head carrier assembly 104. Once in this position, theproximity heads 106 a and 106 b may utilize the IPA and DIW sourceinlets and a vacuum source outlet(s) to generate wafer processingmeniscuses in contact with the wafer 108 which are capable of removingfluids from a top surface 108 a and a bottom surface 108 b. The waferprocessing meniscus may be generated in accordance with the descriptionsin reference to FIGS. 6 through 9B where IPA vapor and DIW are inputtedinto the region between the wafer 108 and the proximity heads 106 a and106 b. At substantially the same time the IPA and DIW is inputted, avacuum may be applied in close proximity to the wafer surface to outputthe IPA vapor, the DIW, and the fluids that may be on a wafer surface.It should be appreciated that although IPA is utilized in the exemplaryembodiment, any other suitable type of vapor may be utilized such as anysuitable alcohol vapor, organic compounds, hexanol, ethyl glycol, etc.that may be miscible with water. These fluids may also be known assurface tension reducing fluids. The portion of the DIW that is in theregion between the proximity head and the wafer is the meniscus. Itshould be appreciated that as used herein, the term “output” can referto the removal of fluid from a region between the wafer 108 and aparticular proximity head, and the term “input” can be the introductionof fluid to the region between the wafer 108 and the particularproximity head.

In another exemplary embodiment, the proximity heads 106 a and 106 b maybe moved in a manner so all parts of the wafer 108 are cleaned, dried,or both without the wafer 108 being rotated. In such an embodiment, theproximity head carrier assembly 104 may be configured to enable movementof the either one or both of the proximity heads 106 a and 106 b toclose proximity of any suitable region of the wafer 108. In oneembodiment, of the proximity heads are smaller in length than a radiusof the wafer, the proximity heads may be configured to move in a spiralmanner from the center to the edge of the wafer 108 or vice versa. In apreferable embodiment, when the proximity heads are larger in lengththan a radius of the wafer, the proximity heads 106 a and 106 b may bemoved over the entire surface of the wafer in one rotation. In anotherembodiment, the proximity heads 104 a and 104 b may be configured tomove in a linear fashion back and forth across the wafer 108 so allparts of the wafer surfaces 108 a and/or 108 b may be processed. In yetanother embodiment, configurations as discussed below in reference toFIG. 5C through 5H may be utilized. Consequently, countless differentconfigurations of the system 100 may be utilized in order to obtain anoptimization of the wafer processing operation.

FIG. 3A shows a top view illustrating the wafer cleaning and dryingsystem 100 with dual proximity heads in accordance with one embodimentof the present invention. As described above in reference to FIGS. 2A to2D, the upper arm 104 a may be configured to move and hold the proximityhead 106 a in a position in close proximity over the wafer 108. Theupper arm 104 a may also be configured to move the proximity head 106 afrom a center portion of the wafer 108 towards the edge of the wafer 108in a substantially linear fashion 113. Consequently, in one embodiment,as the wafer 108 moves as shown by rotation 112, the proximity head 106a is capable of removing a fluid film from the top surface 108 a of thewafer 108 using a process described in further detail in reference toFIGS. 6 through 8. Therefore, the proximity head 106 a may dry the wafer108 in a substantially spiral path over the wafer 108. In anotherembodiment as shown in reference to FIG. 3B, there may be a secondproximity head located below the wafer 108 to remove a fluid film fromthe bottom surface 108 b of the wafer 108.

FIG. 3B illustrates a side view of the wafer cleaning and drying system100 with dual proximity heads in accordance with one embodiment of thepresent invention. In this embodiment, the system 100 includes both theproximity head 106 a capable of processing a top surface of the wafer108 and the proximity head 106 b capable of processing a bottom surfaceof the wafer 108. In one embodiment, spindles 111 a and 111 b along witha roller arm 109 may rotate the rollers 102 a, 102 b, and 102 crespectively. This rotation of the rollers 102 a, 102 b, and 102 c mayrotate the wafer 108 so substantially all surfaces of the wafer 108 maybe presented to the proximity heads 106 a and 106 b for drying and/orcleaning. In one embodiment, while the wafer 108 is being rotated, theproximity heads 106 a and 106 b are brought to close proximity of thewafer surfaces 108 a and 108 b by the arms 104 a and 104 b respectively.Once the proximity heads 106 a and 106 b are brought into closeproximity to the wafer 108, the wafer drying or cleaning may be begun.In operation, the proximity heads 106 a and 106 b may each remove fluidsfrom the wafer 108 by applying IPA, deionized water and vacuum to thetop surface and the bottom surface of the wafer 108 as described inreference to FIG. 6.

In one embodiment, by using the proximity heads 106 a and 106 b, thesystem 100 may dry a 200 mm wafer in less than 45 seconds. In anotherembodiment, where the proximity heads 106 a and 106 b are at least aradius of the wafer in length, the drying time for a wafer may be lessthan 30 seconds. It should be understood that drying or cleaning timemay be decreased by increasing the speed at which the proximity heads106 a and 106 b travels from the center of the wafer 108 to the edge ofthe wafer 108. In another embodiment, the proximity heads 106 a and 106b may be utilized with a faster wafer rotation to dry the wafer 108 inless time. In yet another embodiment, the rotation of the wafer 108 andthe movement of the proximity heads 106 a and 106 b may be adjusted inconjunction to obtain an optimal drying/cleaning speed. In oneembodiment, the proximity heads 106 a and 106 b may move linearly from acenter region of the wafer 108 to the edge of the wafer 108 at betweenabout 0 mm per second to about 50 mm per second.

FIG. 4A shows a top view of a wafer cleaning and drying system 100-1which includes multiple proximity heads for a particular surface of thewafer 108 in accordance with one embodiment of the present invention. Inthis embodiment, the system 100-1 includes an upper arm 104 a-1 and anupper arm 104 a-2. As shown in FIG. 4B, the system 100-1 also mayinclude lower arm 104 b-1 and lower arm 104 b-2 connected to proximityheads 106 b-1 and 106 b-2 respectively. In the system 100-1, theproximity heads 106 a-1 and 106 a-2 (as well as 106 b-1 and 106 b-2 iftop and bottom surface processing is being conducted) work inconjunction so, by having two proximity heads processing a particularsurface of the wafer 108, drying time or cleaning time may be cut toabout half of the time. Therefore, in operation, while the wafer 108 isrotated, the proximity heads 106 a-1, 106 a-2, 106 b-1, and 106 b-2start processing the wafer 108 near the center of the wafer 108 and moveoutward toward the edge of the wafer 108 in a substantially linearfashion. In this way, as the rotation 112 of the wafer 108 brings allregions of the wafer 108 in proximity with the proximity heads so as toprocess all parts of the wafer 108. Therefore, with the linear movementof the proximity heads 106 a-1, 106 a-2, 106 b-1, and 106 b-2 and therotational movement of the wafer 108, the wafer surface being driedmoves in a spiral fashion from the center of the wafer 108 to the edgeof the wafer 108.

In another embodiment, the proximity heads 106 a-1 and 106 b-1 may startprocessing the wafer 108 and after they have moved away from the centerregion of the wafer 108, the proximity heads 106 a-2 and 106 b-2 may bemoved into place in the center region of the wafer 108 to augment inwafer processing operations. Therefore, the wafer processing time may bedecreased significantly by using multiple proximity heads to process aparticular wafer surface.

FIG. 4B shows a side view of the wafer cleaning and drying system 100-1which includes multiple proximity heads for a particular surface of thewafer 108 in accordance with one embodiment of the present invention. Inthis embodiment, the system 100-1 includes both the proximity heads 106a-1 and 106 a-2 that are capable of processing the top surface 108 a ofthe wafer 108, and proximity heads 106 b-1 and 106 b-2 capable ofprocessing the bottom surface 108 b of the wafer 108. As in the system100, the spindles 111 a and 111 b along with a roller arm 109 may rotatethe rollers 102 a, 102 b, and 102 c respectively. This rotation of therollers 102 a, 102 b, and 102 c may rotate the wafer 108 sosubstantially all surfaces of the wafer 108 may brought in closeproximity to the proximity heads 106 a-1, 106 a-2, 106 b-1, and 106 b-2for wafer processing operations.

In operation, each of the proximity heads 106 a-1, 106 a-2, 106 b-1, and106 b-2 may remove fluids from the wafer 108 by applying IPA, deionizedwater and vacuum to the top surface and the bottom surface of the wafer108 as shown, for example, in FIGS. 6 through 8. By having two proximityheads per wafer side, the wafer processing operation (i.e., cleaningand/or drying) may be accomplished in substantially less time. It shouldbe appreciated that as with the wafer processing system described inreference to FIGS. 3A and 3B, the speed of the wafer rotation may bevaried to any suitable speed as long as the configuration enables properwafer processing. In one embodiment, the wafer processing time may bedecreased when half a rotation of the wafer 108 is used to dry theentire wafer. In such an embodiment, the wafer processing speed may beabout half of the processing speed when only one proximity head isutilized per wafer side.

FIG. 5A shows a top view of a wafer cleaning and drying system 100-2with a proximity head 106 a-3 in a horizontal configuration whichextends across a diameter of the wafer 108 in accordance with oneembodiment of the present invention. In this embodiment, the proximityhead 106 a-3 is held by an upper arm 104 a-3 that extends across adiameter of the wafer 108. In this embodiment, the proximity head 106a-3 may be moved into a cleaning/drying position by a vertical movementof the upper arm 104 a-3 so the proximity head 106 a-3 can be in aposition that is in close proximity to the wafer 108. Once the proximityhead 106 a-3 is in close proximity to the wafer 108, the waferprocessing operation of a top surface of the wafer 108 can take place.

FIG. 5B shows a side view of a wafer cleaning and drying system 100-2with the proximity heads 106 a-3 and 106 b-3 in a horizontalconfiguration which extends across a diameter of the wafer 108 inaccordance with one embodiment of the present invention. In thisembodiment, the proximity head 106 a-3 and the proximity head 106 b-3both are elongated to be able to span the diameter of the wafer 108. Inone embodiment, while the wafer 108 is being rotated, the proximityheads 106 a-3 and 106 b-3 are brought to close proximity of the wafersurfaces 108 a and 108 b by the top arm 104 a and a bottom arm 106 b-3respectively. Because the proximity heads 106 a-3 and 106 b-3 extendacross the wafer 108, only half of a full rotation may be needed toclean/dry the wafer 108.

FIG. 5C shows a top view of a wafer cleaning and drying system 100-3with the proximity heads 106 a-3 and 106 b-3 in a horizontalconfiguration which is configured to clean and/or dry the wafer 108 thatis stationary in accordance with one embodiment of the presentinvention. In this embodiment, the wafer 108 may be held stationary byany suitable type of wafer holding device such as, for example, an edgegrip, fingers with edge attachments, etc. The proximity head carrierassembly 104′″ is configured to be movable from one edge of the wafer108 across the diameter of the wafer 108 to an edge on the other side ofthe wafer 108 after crossing the entire wafer diameter. In this fashion,the proximity head 106 a-3 and/or the proximity head 106 b-3 (as shownbelow in reference to FIG. 5D) may move across the wafer following apath along a diameter of the wafer 108 from one edge to an oppositeedge. It should be appreciated that the proximity heads 106 a-3 and/or106 b-3 may be move from any suitable manner that would enable movingfrom one edge of the wafer 108 to another diametrically opposite edge.In one embodiment, the proximity head 106 a-3 and/or the proximity head106 b-3 may move in directions 121 (e.g., top to bottom or bottom to topof FIG. 5C). Therefore, the wafer 108 may stay stationary without anyrotation or movement and the proximity heads 106 a-3 and/or theproximity head 106 b-3 may move into close proximity of the wafer and,through one pass over the wafer 108, clean/dry the top and/or bottomsurface of the wafer 108.

FIG. 5D shows a side view of a wafer cleaning and drying system 100-3with the proximity heads 106 a-3 and 106 b-3 in a horizontalconfiguration which is configured to clean and/or dry the wafer 108 thatis stationary in accordance with one embodiment of the presentinvention. In this embodiment, the proximity head 106 a-3 is in ahorizontal position with the wafer 108 also in a horizontal position. Byuse of the proximity head 106 a-3 and the proximity head 106 b-3 thatspans at least the diameter of the wafer 108, the wafer 108 may becleaned and/or dried in one pass by moving proximity heads 106 a-3 and106 b-3 in the direction 121 as discussed in reference to FIG. 5C.

FIG. 5E shows a side view of a wafer cleaning and drying system 100-4with the proximity heads 106 a-3 and 106 b-3 in a vertical configurationenabled to clean and/or dry the wafer 108 that is stationary inaccordance with one embodiment of the present invention. In thisembodiment, the proximity heads 106 a-3 and 106 b-3 are in a verticalconfiguration, and the proximity heads 106 a-3 and 106 b-3 areconfigured to move either from left to right, or from right to left,beginning from a first edge of the wafer 108 to a second edge of thewafer 108 that is diametrically opposite to the first edge. Therefore,in such as embodiment, the proximity head carrier assembly 104′″ maymove the proximity heads 104 a-3 and 104 b-3 in close proximity with thewafer 108 and also enable the movement of the proximity heads 104 a-3and 104 b-3 across the wafer from one edge to another so the wafer 108may be processed in one pass thereby decreasing the time to clean and/ordry the wafer 108.

FIG. 5F shows an alternate side view of a wafer cleaning and dryingsystem 100-4 that is shifted 90 degrees from the side view shown in FIG.5E in accordance with one embodiment of the present invention. It shouldbe appreciated that the proximity head carrier assembly 104′″ may beoriented in any suitable manner such as for example, having theproximity head carrier assembly 104′″ rotated 180 degrees as comparedwith what is shown in FIG. 5F.

FIG. 5G shows a top view of a wafer cleaning and drying system 100-5with a proximity head 106 a-4 in a horizontal configuration whichextends across a radius of the wafer 108 in accordance with oneembodiment of the present invention. In one embodiment, the proximityhead 106 a-4 extends across less than a radius of a substrate beingprocessed. In another embodiment, the proximity head 106 a-4 may extendthe radius of the substrate being processed. In a preferable embodiment,the proximity head 106 a-4 extends over a radius of the wafer 108 so theproximity head may process both the center point of the wafer 108 aswell as an edge of the wafer 108 so the proximity head 106 a-4 can coverand process the center point of the wafer and the edge of the wafer. Inthis embodiment, the proximity head 106 a-4 may be moved into acleaning/drying position by a vertical movement of the upper arm 104 a-4so the proximity head 106 a-4 can be in a position that is in closeproximity to the wafer 108. Once the proximity head 106 a-4 is in closeproximity to the wafer 108, the wafer processing operation of a topsurface of the wafer 108 can take place. Because, in one embodiment, theproximity head 106 a-4 extends over the radius of the wafer, the wafermay be cleaned and/or dried in one rotation.

FIG. 5H shows a side view of a wafer cleaning and drying system 100-5with the proximity heads 106 a-4 and 106 b-4 in a horizontalconfiguration which extends across a radius of the wafer 108 inaccordance with one embodiment of the present invention. In thisembodiment, the proximity head 106 a-4 and the proximity head 106 b-4both are elongated to be able to extend over and beyond the radius ofthe wafer 108. As discussed in reference to FIG. 5G, depending on theembodiment desired, the proximity head 106 a-4 may extend less than aradius, exactly a radius, or greater than a radius of the wafer 108. Inone embodiment, while the wafer 108 is being rotated, the proximityheads 106 a-4 and 106 b-4 are brought to close proximity of the wafersurfaces 108 a and 108 b by the top arm 104 a and a bottom arm 106 b-4respectively. Because in one embodiment, the proximity heads 106 a-4 and106 b-4 extend across greater than the radius of the wafer 108, only afull rotation may be needed to clean/dry the wafer 108.

As shown in FIGS. 2A-5H above, the proximity heads can move the meniscusacross the surfaces of the wafer and even off the edge of the wafer.Unfortunately, the abrupt edge of the wafer can often cause the meniscusto fail (i.e., burst) causing droplets to be formed on the surface ofthe wafer. The droplets can then cause undesirable residue to form onthe surfaces of the wafer as the droplets evaporate. One embodiment ofthe present invention provides additional support for the meniscus tomove from the surface of the wafer to an adjacent edge platform.Alternatively, the meniscus can be formed on the adjacent edge platformand the moved across a gap between the edge platform and the wafer ontothe wafer. The edge platform can also allow the meniscus to be movedcompletely off of the wafer surface before the meniscus is allowed tofail. The edge platform substantially eliminates meniscus failures onthe surfaces of the wafer thereby providing a more complete cleaningprocess or drying process.

FIG. 5 i shows a wafer cleaning and drying system 100-6 in accordancewith one embodiment of the present invention. The wafer cleaning anddrying system 100-6 can be used in vertical or horizontal orientations.The wafer cleaning and drying system 100-6 includes proximity heads 106a-5 and 106 b-5 (shown in FIG. 5J below) that are wider than thediameter of the wafer 108. The wafer cleaning and drying system 100-6also includes an edge platform 110 that surrounds the wafer 108. Arelatively small gap 110 a (e.g., less than about 5 mm) is providedbetween the wafer 108 and the edge platform 110.

The edge platform 110 is approximately co-planer with the wafer 108,however, the edge platform may be slightly offset from the wafersurface. For example, if the wafer is about 700 micron in thickness,then the edge platform 110 could have a thickness of between about 600micron and about 800 micron. As a result, a top surface of the edgeplatform 110 can be offset about 50 to about 100 micron or more relativeto the top surface of the wafer 108. The edge platform 110 can be anythickness that can allow the proximity heads 106 a-5 and 106 b-5 tosupport the respective meniscuses 106 a-6 and 106 b-6 as the meniscusesis moved from the wafer 108 to the edge platform or from the edgeplatform to the wafer.

The wafer 108 may be held stationary by any suitable type of waferholding device such as, for example, an edge grip, fingers with edgeattachments, etc. The proximity head carrier assembly 104-5 isconfigured to be movable from beyond one edge of the wafer 108 acrossthe diameter of the wafer 108 and beyond the edge on the other side ofthe wafer after crossing the entire wafer diameter. In this fashion, theproximity head 106 a-5 and/or the proximity head 106 b-5 may move fromoff of the edge of the wafer fully across the wafer following a pathalong a diameter of the wafer 108. A meniscus 106 a-6 may thereby beformed by the proximity head 106 a-5 while in position 107-1, on theedge platform 110 and fully off the surface of the wafer 108. Once themeniscus 106 a-6 is formed off of the wafer 108, the proximity head 106a-5 can move (i.e., scan) the meniscus 106 a-6 across the wafer toposition 107-2 on the edge platform 10 also fully off the surface of thewafer 108. Alternatively, the proximity head 106 a-5 can form themeniscus 106 a-6 on the wafer 108 and then move the meniscus across thewafer and off of the wafer. Similarly, a corresponding meniscus 106 b-6may be formed and moved across the opposing surface of the edge platform110 and wafer 108 by the proximity head 106 b-5. The proximity heads 106a-5, 106 b-5 can scan the respective sides of the wafer 108 individuallyor simultaneously, in substantial alignment with one another.

It should be appreciated that the proximity heads 106 a-5 and/or 106 b-5may be moved by any suitable manner that would enable moving from beyondone edge of the wafer 108 to beyond another diametrically opposite edge.In one embodiment, the proximity head 106 a-5 and/or the proximity head106 b-5 may move in directions 121-1 (e.g., top to bottom or bottom totop of FIG. 5 i). Therefore, the wafer 108 may stay stationary withoutany rotation or movement and the proximity heads 106 a-5 and/or theproximity head 106 b-5 may move into close proximity of the wafer and,through one pass over the wafer 108, clean/dry the top and/or bottomsurface of the wafer 108.

The wafer cleaning and drying system 100-6 can be used to perform alinear scan of entire surface of the wafer 108 in one pass of the wafer,without requiring the wafer to rotate. A linear scan provides a highscan rate (e.g., more than about 20 to about 50 mm per second) acrossthe wafer 108. This allows a uniform residence time (i.e., approximatelyconstant residence time) of the meniscus 106 a-6 on each portion ofsurface of the wafer 108. The uniform residence time can be verybeneficial in maintaining, for example, a constant etch-rate across theentire surface of the wafer 108 during an etching process or a constantrinse process in a rinsing process, or a constant drying process in adrying process.

Devices and surfaces such as the edge platform 110 and the proximityheads 106 a-5 and 106 b-5 that are used in close proximity to the wafer108 surface or edge and participate in (i.e., bound) one or more of themeniscuses 106 a-6 and 106 b-6 so as to assist in forming the meniscusescan be more efficient in moving the liquid contents of the meniscuses ifan increased surface tension gradient is present. By way of example, thesurface tension gradient can be increased when the proximity head has alower surface tension than the wafer. The surface tension gradient canbe greater because the wafer 108 is more hydrophobic than the proximityheads 106 a-5 and 106 b-5. A hydrophobic material has less attraction(e.g., higher surface tension) for a selected liquid. A hydrophilicmaterial has a greater attraction (e.g., lower surface tension) for theselected liquid. By way of example, if the edge platform 110 has a lowersurface tension (e.g., more hydrophilic) for the liquid contents of themeniscus 106 a-6, than the wafer 108, then less of the liquid contentsof the meniscus will tend to be left behind on the wafer (i.e., thewafer will be dryer) when the meniscus is moved off of the wafer andonto the edge platform 110. In another example, an increased surfacetension gradient between the wafer 108 and the proximity heads 106 a-5and 106 b-5 can allow the meniscuses to be more easily and effectivelymoved across the surface of the wafer. Maximizing the difference insurface tension (i.e., maximizing the surface tension gradient) willfurther enhance the drying effect of moving the meniscus from a firstsurface to a second surface.

Therefore the surface materials of such devices and surfaces can beselected to optimize the relative surface tensions of the devices andsurfaces as compared to the wafer 108. By way of example, a proximityhead having a more hydrophilic property than both the wafer 108 and theedge platform 110 will assist in minimizing the amount of liquid thatmay remain on the wafer as the meniscus is moved from the wafer to theedge platform. If the edge platform 110 is also more hydrophilic thanthe wafer 108, then the amount of liquid that may remain on the surfaceof the wafer may be even further reduced.

The edge platform 110 can be manufactured from any suitable material(e.g., glass, silicon, quartz, composite materials, plastic andcombinations thereof). The edge platform 110 can be a hydrophobic or ahydrophilic material as selected for the specific process. By way ofexample, a hydrophilic edge platform 110 could reduce the possibilitythat the meniscus would leave any droplets on the wafer 108 as themeniscus was moved from the wafer 108 to the edge platform.

FIGS. 5J-5L show side views of the wafer cleaning and drying system100-6 as the proximity heads 106 a-5 and 106 b-5 move the respectivemeniscuses 106 a-6, 106 b-6 from the surfaces of the wafer 108 to theadjacent edge platform 110 in accordance with one embodiment of thepresent invention. As shown in FIG. 5J, the proximity heads 106 a-5 and106 b-5 are supporting the respective meniscuses 106 a-6 and 106 b-6 onthe wafer 108. The proximity heads 106 a-5 and 106 b-5 are moving themeniscuses in direction 121-1, toward the edge platform 110.

In FIG. 5K, the proximity heads 106 a-5 and 106 b-5 have moved therespective meniscuses 106 a-6 and 106 b-6 so that the meniscuses aresupported partially on the wafer 108 and partially on the edge platform110. The gap 110 a between the edge platform 110 and the wafer 108 isfully filled by the meniscuses 106 a-6 and 106 b-6. The meniscuses 106a-6 and 106 b-6 do not burst or fail due to the gap 110 a because thegap is maintained at a size sufficiently small enough for one or both ofthe proximity heads 106 a-5 and 106 b-5 to fully support the respectivemeniscuses 106 a-6, 106 b-6 between the proximity heads.

In FIG. 5L, the proximity heads 106 a-5 and 106 b-5 have moved therespective meniscuses 106 a-6 and 106 b-6 so that the meniscuses aresupported fully on the edge platform 110. Once the meniscuses 106 a-6and 106 b-6 are moved fully on the edge platform 110, the meniscuses canbe allowed to burst or collapse because the resulting droplets will notform on the wafer 108 but will form on the edge platform. As describedin FIGS. 5J-L above, the proximity heads 106 a-5 and 106 b-5 can movethe meniscuses from a first surface (e.g., the wafer 108 or the edgeplatform 110) to a second surface (e.g., the wafer 108 or the edgeplatform 110), in either direction.

FIG. 5M shows a wafer cleaning and drying system 100-7 in accordancewith one embodiment of the present invention. The wafer cleaning anddrying system 100-7 can be used in vertical or horizontal orientationsor any orientation between the vertical and the horizontal. The wafercleaning and drying system 100-7 includes a partial edge platform 110-1,rather than a full edge platform 110 included in the wafer cleaning anddrying system 100-6 of FIG. 5 i above. In the wafer cleaning and dryingsystem 100-7 the wafer 108 can be stationary or rotated. The proximityheads 106 a-7 and 106 b-7 (hidden directly below proximity head 106 a-7)can form the respective meniscuses 106 a-8 and 106 b-8 in position 107-4on the edge platform 110-1 and then move the meniscuses into position107-3 partially on the wafer 108 and spanning a gap 110-1 a to the edgeplatform. The meniscuses can also be moved off of the wafer to returnthe meniscuses position 107-4 fully on the edge platform. The edge ofthe wafer 108 can also be processed (e.g., cleaned, etched, rinsed,dried, etc.) as the wafer rotates and the edge passes through themeniscuses 106 a-8 and 106 b-8 in position 107-3. The proximity heads106 a-7 and 106 b-7 have a length of at least the radius of the wafer108 so that the proximity heads and the respective meniscuses can coverthe entire surface of the wafer in a single rotation of the wafer (e.g.,in direction 121-4) when in position 107-3.

FIG. 5N shows a wafer cleaning and drying system 100-8 in accordancewith one embodiment of the present invention. The wafer cleaning anddrying system 100-8 can be used in vertical or horizontal orientations.The wafer cleaning and drying system 100-8 includes a partial edgeplatform 110-2 similar to the wafer cleaning and drying system 100-7above. In the wafer cleaning and drying system 100-8 the wafer 108 canbe stationary or rotated. The proximity heads 106 a-7 and 106 b-7(hidden directly below proximity head 106 a-7) can form the respectivemeniscuses 106 a-8 and 106 b-8 in position 107-5 on the edge platform110-2 and then move the meniscuses into position 107-3, partially on thewafer 108 and spanning a gap 110-2 a to the edge platform. Themeniscuses can also be moved off of the wafer 108 and fully onto theedge platform 110-2, in position 107-5. In one embodiment, the partialedge platform 110-2 can also be movable relative to the wafer 108. Byway of example, the partial edge platform 110-2 can move with theproximity head 106 a-7 so as maintain alignment with the proximity headand to support that portion of the meniscus 106 a-8 that is notsupported by the wafer 108. In this manner, a smaller partial edgeplatform can be used.

FIG. 5N-1 is a flowchart diagram of the method operations 101 of using awafer cleaning and drying systems 100-6, 100-7 and 100-8 in accordancewith one embodiment of the present invention. In an operation 101-5, aproximity head is positioned in close proximity over a first surface(e.g., an edge platform or a wafer surface). In an operation 101-10, ameniscus is formed between the proximity head and the first surface. Thefirst surface is adjacent to a second surface (e.g., the other of anedge platform or a wafer surface). The first surface may be in contactwith the second surface or maybe separated from the second surface by arelatively small gap or separating space. In an operation 101-20, theproximity head moves the meniscus fully off of the first surface andfully onto the second surface.

By way of example, in operation 101-5, the proximity head 106 a-5 ispositioned in close proximity to the surface of the wafer 108 as shownin FIG. 5J above. In operation 101-10, the proximity head 106 a-5 canform meniscus 106 a-6 between the proximity head and the surface of thewafer 108.

In operation 101-15, the proximity head 106 a-5 moves the meniscus 106a-6 at least partially off of the surface of the wafer 108 to theadjacent edge platform 110 as shown in FIG. 5K above. In operation101-20, the proximity head 106 a-5 moves the meniscus 106 a-6 fully offof the surface of the wafer 108 and fully onto the edge platform 110 asshown in FIG. 5L above.

Once the meniscus 106 a-6 is fully off of the surface of the wafer 108,the meniscus can be allowed to burst (e.g., liquid supply to themeniscus shut down). Since the meniscus 106 a-6 is fully off of thesurface of the wafer 108, any droplets that may form when the meniscusis allowed to burst will not form on the surface of the wafer.

FIG. 5N-2 is a detailed cross-sectional view of the edge platform 110,in accordance with one embodiment of the present invention. The edge 110b of the edge platform 110 can include rounded corners (as shown) oreven a completely “beveled” (e.g., angled, fully rounded, etc.) similarto the beveled or rounded edge of the wafer 108. The edge platform 110can have a surface finish quality similar to that of the wafer 108 orthe proximity heads described elsewhere herein. The edge platform 110can be thicker or thinner than the wafer 108. By way of example,atypical wafer is about 750 micro in thickness. The edge platform 110can be as thin as about 500 micron and as thick as about 1.2 mm or more.

In one embodiment, the edge 10 b of the edge platform 110 can alsoinclude multiple inlets and/or outlets 110 c that are arranged along theedge 110 b. The multiple inlets 110 c can be vacuum inlets to removeexcess fluid in the gap 110 a between the edge platform 110 and thewafer 108. The multiple inlets and/or outlets 110 c can also includeoutlets for injecting IPA vapor (e.g., on a carrier gas) and even forinjecting fluid for supporting the meniscus. One or more of the multipleinlets and/or outlets 110 c are connected to a source 110d through achannel 110 e inside the edge platform 110 and a interconnectingtubing/piping 110 f. The channel 110 e can be as wide as physicallypossible given the thickness constraint of the edge platform 110. By wayof example, an edge platform 110 having a thickness of about 1.2 mm cansupport a channel 110 e of about 800 micro in thickness (T). Conversely,a an edge platform 110 having a thickness of about 600 micro can supporta channel 110 e of about 250 micron in thickness (T). The multipleinlets and/or outlets 110 c can also be combined to form a slot in theedge 110 b of the edge platform 110. The multiple inlets and/or outlets110 c can also be used for more than one function. By way of example, afirst portion of the multiple inlets and/or outlets 110 c can be coupledto an IPA source to inject IPA into the gap 110 a. Simultaneously, asecond portion of the multiple inlets and/or outlets 110 c can becoupled to a vacuum source to remove excess fluid from the gap 110 a.

FIG. 6A shows a proximity head inlet/outlet orientation 117 that may beutilized to clean and dry the wafer 108 in accordance with oneembodiment of the present invention. In one embodiment, the orientation117 is a portion of a proximity head 106 a where other source inlets 302and 306 in addition to other source outlets 304 may be utilized inaddition to the orientation 117 shown. The orientation 117 may include asource inlet 306 on a leading edge 109 with a source outlet 304 inbetween the source inlet 306 and the source outlet 302.

FIG. 6B shows another proximity head inlet/outlet orientation 119 thatmay be utilized to clean and dry the wafer 108 in accordance with oneembodiment of the present invention. In one embodiment, the orientation119 is a portion of a proximity head 106 a where other source inlets 302and 306 in addition to other source outlets 304 may be utilized inaddition to the orientation 119 shown. The orientation 119 may include asource outlet 304 on a leading edge 109 with a source inlet 302 inbetween the source outlet 304 and the source inlet 306.

FIG. 6C shows a further proximity head inlet/outlet orientation 121 thatmay be utilized to clean and dry the wafer 108 in accordance with oneembodiment of the present invention. In one embodiment, the orientation121 is a portion of a proximity head 106 a where other source inlets 302and 306 in addition to other source outlets 304 may be utilized inaddition to the orientation 119 shown. The orientation 119 may include asource inlet 306 on a leading edge 109 with a source inlet 302 inbetween the source outlet 304 and the source outlet 306.

FIG. 6D illustrates a preferable embodiment of a wafer drying processthat may be conducted by a proximity head 106 a in accordance with oneembodiment of the present invention. Although FIG. 6 shows a top surface108 a being dried, it should be appreciated that the wafer dryingprocess may be accomplished in substantially the same way for the bottomsurface 108 b of the wafer 108. In one embodiment, a source inlet 302may be utilized to apply isopropyl alcohol (IPA) vapor toward a topsurface 108 a of the wafer 108, and a source inlet 306 may be utilizedto apply deionized water (DIW) toward the top surface 108 a of the wafer108. In addition, a source outlet 304 may be utilized to apply vacuum toa region in close proximity to the wafer surface to remove fluid orvapor that may located on or near the top surface 108 a. It should beappreciated that any suitable combination of source inlets and sourceoutlets may be utilized as long as at least one combination exists whereat least one of the source inlet 302 is adjacent to at least one of thesource outlet 304 which is in turn adjacent to at least one of thesource inlet 306. The IPA may be in any suitable form such as, forexample, IPA vapor where IPA in vapor form is inputted through use of aN₂ carrier gas. Moreover, although DIW is utilized herein, any othersuitable fluid may be utilized that may enable or enhance the waferprocessing such as, for example, water purified in other ways, cleaningfluids, etc. In one embodiment, an IPA inflow 310 is provided throughthe source inlet 302, a vacuum 312 may be applied through the sourceoutlet 304 and DIW inflow 314 may be provided through the source inlet306. Therefore, an embodiment of the IPA-vacuum-DIW orientation asdescribed above in reference to FIG. 2 is utilized. Consequently, if afluid film resides on the wafer 108, a first fluid pressure may beapplied to the wafer surface by the IPA inflow 310, a second fluidpressure may be applied to the wafer surface by the DIW inflow 314, anda third fluid pressure may be applied by the vacuum 312 to remove theDIW, IPA and the fluid film on the wafer surface.

Therefore, in one embodiment, as the DIW inflow 314 and the IPA inflow310 is applied toward a wafer surface, any fluid on the wafer surface isintermixed with the DIW inflow 314. At this time, the DIW inflow 314that is applied toward the wafer surface encounters the IPA inflow 310.The IPA forms an interface 118 (also known as an IPA/DIW interface 118)with the DIW inflow 314 and along with the vacuum 312 assists in theremoval of the DIW inflow 314 along with any other fluid from thesurface of the wafer 108. In one embodiment, the IPA/DIW interface 118reduces the surface of tension of the DIW. In operation, the DIW isapplied toward the wafer surface and almost immediately removed alongwith fluid on the wafer surface by the vacuum applied by the sourceoutlet 304. The DIW that is applied toward the wafer surface and for amoment resides in the region between a proximity head and the wafersurface along with any fluid on the wafer surface forms a meniscus 116where the borders of the meniscus 116 are the IPA/DIW interfaces 118.Therefore, the meniscus 116 is a constant flow of fluid being appliedtoward the surface and being removed at substantially the same time withany fluid on the wafer surface. The nearly immediate removal of the DIWfrom the wafer surface prevents the formation of fluid droplets on theregion of the wafer surface being dried thereby reducing the possibilityof contamination drying on the wafer 108. The pressure (which is causedby the flow rate of the IPA) of the downward injection of IPA also helpscontain the meniscus 116.

The flow rate of the N₂ carrier gas for the IPA assists in causing ashift or a push of water flow out of the region between the proximityhead and the wafer surface and into the source outlets 304 through whichthe fluids may be outputted from the proximity head. Therefore, as theIPA and the DIW is pulled into the source outlets 304, the boundarymaking up the IPA/DIW interface 118 is not a continuous boundary becausegas (e.g., air) is being pulled into the source outlets 304 along withthe fluids. In one embodiment, as the vacuum from the source outlet 304pulls the DIW, IPA, and the fluid on the wafer surface, the flow intothe source outlet 304 is discontinues. This flow discontinuity isanalogous to fluid and gas being pulled up through a straw when a vacuumis exerted on combination of fluid and gas. Consequently, as theproximity head 106 a moves, the meniscus moves along with the proximityhead, and the region previously occupied by the meniscus has been drieddue to the movement of the IPA/DIW interface 118. It should also beunderstood that the any suitable number of source inlets 302, sourceoutlets 304 and source inlets 306 may be utilized depending on theconfiguration of the apparatus and the meniscus size and shape desired.In another embodiment, the liquid flow rates and the vacuum flow ratesare such that the total liquid flow into the vacuum outlet iscontinuous, so no gas flows into the vacuum outlet.

It should be appreciated any suitable flow rate may be utilized for theIPA, DIW, and vacuum as long as the meniscus 116 can be maintained. Inone embodiment, the flow rate of the DIW through a set of the sourceinlets 306 is between about 25 ml per minute to about 3,000 ml perminute. In a preferable embodiment, the flow rate of the DIW through theset of the source inlets 306 is about 400 ml per minute. It should beunderstood that the flow rate of fluids may vary depending on the sizeof the proximity head. In one embodiment a larger head may have agreater rate of fluid flow than smaller proximity heads. This may occurbecause larger proximity heads, in one embodiment, have more sourceinlets 302 and 306 and source outlets 304 more flow for larger head.

In one embodiment, the flow rate of the IPA vapor through a set of thesource inlets 302 is between about 1 standard cubic feet per hour (SCFH)to about 100 SCFH. In a preferable embodiment, the IPA flow rate isbetween about 5 and 50 SCFH.

In one embodiment, the flow rate for the vacuum through a set of thesource outlets 304 is between about 10 standard cubic feet per hour(SCFH) to about 1250 SCFH. In a preferable embodiment, the flow rate fora vacuum though the set of the source outlets 304 is about 350 SCFH. Inan exemplary embodiment, a flow meter may be utilized to measure theflow rate of the IPA, DIW, and the vacuum.

FIG. 6E shows another wafer drying process using another sourceinlet/outlet orientation that may be conducted by a proximity head 106 ain accordance with one embodiment of the present invention. In thisembodiment, the proximity head 106 a may be moved over the top surface108 a of the wafer 108 so the meniscus may be moved along the wafersurface 108 a. The meniscus applies fluid to the wafer surface andremoves fluid from the wafer surface thereby cleaning and drying thewafer simultaneously. In this embodiment, the source inlet 306 applies aDIW flow 314 toward the wafer surface 108 a, the source inlet 302applies IPA flow 310 toward the wafer surface 108 a, and the sourceoutlet 312 removes fluid from the wafer surface 108 a. It should beappreciated that in this embodiment as well as other embodiments of theproximity head 106 a described herein, additional numbers and types ofsource inlets and source outlets may be used in conjunction with theorientation of the source inlets 302 and 306 and the source outlets 304shown in FIG. 6E. In addition, in this embodiment as well as otherproximity head embodiments, by controlling the amount of flow of fluidsonto the wafer surface 108 a and by controlling the vacuum applied, themeniscus may be managed and controlled in any suitable manner. Forexample, in one embodiment, by increasing the DIW flow 314 and/ordecreasing the vacuum 312, the outflow through the source outlet 304 maybe nearly all DIW and the fluids being removed from the wafer surface108 a. In another embodiment, by decreasing the DIW flow 314 and/orincreasing the vacuum 312, the outflow through the source outlet 304 maybe substantially a combination of DIW and air as well as fluids beingremoved from the wafer surface 108 a.

FIG. 6F shows another source inlet and outlet orientation where anadditional source outlet 307 may be utilized to input an additionalfluid in accordance with one embodiment of the present invention. Theorientation of inlets and outlets as shown in FIG. 6E is the orientationdescribed in further detail in reference to FIG. 6D except theadditional source outlet 307 is included adjacent to the source inlet306 on a side opposite that of the source outlet 304. In such anembodiment, DIW may be inputted through the source inlet 306 while adifferent solution such as, for example, a cleaning solution may beinputted through the source inlet 307. Therefore, a cleaning solutionflow 315 may be utilized to enhance cleaning of the wafer 108 while asubstantially the same time drying the top surface 108 a of the wafer108.

FIG. 7A illustrates a proximity head 106 performing a drying operationin accordance with one embodiment of the present invention. Theproximity head 106, in one embodiment, moves while in close proximity tothe top surface 108 a of the wafer 108 to conduct a cleaning and/ordrying operation. It should be appreciated that the proximity head 106may also be utilized to process (e.g., clean, dry, etc.) the bottomsurface 108 b of the wafer 108. In one embodiment, the wafer 108 isrotating so the proximity head 106 may be moved in a linear fashionalong the head motion while fluid is removed from the top surface 108 a.By applying the IPA 310 through the source inlet 302, the vacuum 312through source outlet 304, and the deionized water 314 through thesource inlet 306, the meniscus 116 as discussed in reference to FIG. 6may be generated.

FIG. 7B shows a top view of a portion of a proximity head 106 inaccordance with one embodiment of the present invention. In the top viewof one embodiment, from left to right are a set of the source inlet 302,a set of the source outlet 304, a set of the source inlet 306, a set ofthe source outlet 304, and a set of the source inlet 302. Therefore, asN₂/IPA and DIW are inputted into the region between the proximity head106 and the wafer 108, the vacuum removes the N₂/IPA and the DIW alongwith any fluid film that may reside on the wafer 108. The source inlets302, the source inlets 306, and the source outlets 304 described hereinmay also be any suitable type of geometry such as for example, circularopening, square opening, etc. In one embodiment, the source inlets 302and 306 and the source outlets 304 have circular openings.

FIG. 7C illustrates a proximity head 106 with angled source inlets 302′performing a drying operation in accordance with one embodiment of thepresent invention. It should be appreciated that the source inlets 302′and 306 and the source outlet(s) 304 described herein may be angled inany suitable way to optimize the wafer cleaning and/or drying process.In one embodiment, the angled source inlets 302′ that input IPA vaporonto the wafer 108 is angled toward the source inlets 306 such that theIPA vapor flow is directed to contain the meniscus 116.

FIG. 7D illustrates a proximity head 106 with angled source inlets 302′and angled source outlets 304′ performing a drying operation inaccordance with one embodiment of the present invention. It should beappreciated that the source inlets 302′ and 306 and the angled sourceoutlet(s) 304′ described herein may be angled in any suitable way tooptimize the wafer cleaning and/or drying process.

In one embodiment, the angled source inlets 302′ that input IPA vaporonto the wafer 108 is angled at an angle θ₅₀₀ toward the source inlets306 such that the IPA vapor flow is directed to contain the meniscus116. The angled source outlet 304′ may, in one embodiment, be angled atan angle θ₅₀₀ towards the meniscus 116. It should be appreciated thatthe angle θ₅₀₀ and the angle θ₅₀₂ may be any suitable angle that wouldoptimize the management and control of the meniscus 116. In oneembodiment, the angle θ₅₀₀ is greater than 0 degrees and less than 90degrees, and the angle θ₅₀₂ is greater than 0 degrees and less than 90degrees. In a preferable embodiment, the angle θ₅₀₀ is about 15 degrees,and in another preferable embodiment, the angle angled at an angle θ₅₀₂is about 15 degrees. The angle θ₅₀₀ and the angle θ₅₀₂ adjusted in anysuitable manner to optimize meniscus management. In one embodiment, theangle θ₅₀₀ and the angle θ₅₀₂ may be the same, and in anotherembodiment, the angle angle θ₅₀₀ and the angle θ₅₀₂ may be different. Byangling the angled source inlet(s) 302′ and/or angling the angled sourceoutlet(s) 304′, the border of the meniscus may be more clearly definedand therefore control the drying and/or cleaning the surface beingprocessed.

FIG. 8A illustrates a side view of the proximity heads 106 and 106 b foruse in a dual wafer surface cleaning and drying system in accordancewith one embodiment of the present invention. In this embodiment, byusage of source inlets 302 and 306 to input N₂/IPA and DIW respectivelyalong with the source outlet 304 to provide a vacuum, the meniscus 116may be generated. In addition, on the side of the source inlet 306opposite that of the source inlet 302, there may be a source outlet 304to remove DIW and to keep the meniscus 116 intact. As discussed above,in one embodiment, the source inlets 302 and 306 may be utilized forN₂/IPA inflow 310 and DIW inflow 314 respectively while the sourceoutlet 304 may be utilized to apply vacuum 312. It should be appreciatedthat any suitable configuration of source inlets 302, source outlets 304and source inlets 306 may be utilized. For example, the proximity heads106 and 106 b may have a configuration of source inlets and sourceoutlets like the configuration described above in reference to FIGS. 7Aand 7B. In addition, in yet more embodiments, the proximity heads 106and 106 b may be of a configuration as shown below in reference to FIGS.9 through 15. Any suitable surface coming into contact with the meniscus116 may be dried by the movement of the meniscus 116 into and away fromthe surface.

FIG. 8B shows the proximity heads 106 and 106 b in a dual wafer surfacecleaning and drying system in accordance with one embodiment of thepresent invention. In this embodiment, the proximity head 106 processesthe top surface 108 a of the wafer 108, and the proximity head 106 bprocesses the bottom surface of 108 b of the wafer 108. By the inputtingof the N₂/IPA and the DIW by the source inlets 302 and 306 respectively,and by use of the vacuum from the source outlet 304, the meniscus 116may be formed between the proximity head 106 and the wafer 108 andbetween the proximity head 106 b and the wafer 108. The proximity heads106 and 106 b, and therefore the meniscus 116, may be moved over the wetareas of the wafer surface in a manner so the entire wafer 108 can beprocessed (e.g., cleaned, dried).

FIG. 9A illustrates a processing window 538-1 in accordance with oneembodiment of the present invention. In one embodiment, the processingwindow 538-1 may include a plurality of source inlets 302 and 306 andalso a plurality of source outlets 304. The processing window 538-1 is aregion on a proximity head 106 (or any other proximity head referencedherein) that may generate and control the shape and size (e.g., area) ofthe meniscus 116. Therefore, the processing window 538-1 may be a regionthat dries and/or cleans a wafer if the proximity head 106 is desired tobe used in that manner. In one embodiment, the processing window 538-1is a substantially rectangular shape. It should be appreciated that thesize of the processing window 538-1 (or any other suitable processingwindow described herein) may be any suitable length and width (as seenfrom a top view).

FIG. 9B illustrates a substantially circular processing window 538-2 inaccordance with one embodiment of the present invention. In oneembodiment, the processing window 538-2 may include a plurality ofsource inlets 302 and 306 and also a plurality of source outlets 304.The processing window 538-2 is a region on the proximity head 106 (orany other proximity head referenced herein) that may generate andcontrol the meniscus 116. Therefore, the processing window 538-2 may bea region that dries and/or cleans a wafer if the proximity head 106 isdesired to be used in that manner. In one embodiment, the processingwindow 538-2 is a substantially circular shape.

FIG. 9C illustrates a processing window 538-3 in accordance with oneembodiment of the present invention. In one embodiment, the processingwindow 538-3 may include a plurality of source inlets 302 and 306 andalso a plurality of source outlets 304. The processing window 538-3 is aregion on the proximity head 106 (or any other proximity head referencedherein) that may generate and control the meniscus 116. Therefore, theprocessing window 538-3 may be a region that dries and/or cleans a waferif the proximity head 106 is desired to be used in that manner. In oneembodiment, the processing window 538-3 is a substantially oval inshape.

FIG. 9D illustrates a processing window 538-4 in accordance with oneembodiment of the present invention. In one embodiment, the processingwindow 538-4 may include a plurality of source inlets 302 and 306 andalso a plurality of source outlets 304. The processing window 538-4 is aregion on the proximity head 106 (or any other proximity head referencedherein) that may generate and control the meniscus 116. Therefore, theprocessing window 538-4 may be a region that dries and/or cleans a waferif the proximity head 106 is desired to be used in that manner. In oneembodiment, the processing window 538-4 is a substantially square shape.

FIG. 10A shows an exemplary process window 538-1 with the plurality ofsource inlets 302 and 306 as well as the plurality of source outlets 304in accordance with one embodiment of the present invention. In oneembodiment, the process window 538-1 in operation may be moved indirection 546 across a wafer during, for example, a wafer dryingoperation. In such an embodiment, a proximity head 106 may encounterfluids on a wafer surface on a leading edge region 548. The leading edgeregion 548 is an area of the proximity head 106 that, in a dryingprocess, encounters fluids first. Conversely a trailing edge region 560is an area of the proximity head 106 that encounters the area beingprocessed last. As the proximity head 106 and the process window 538-1included therein move across the wafer in the direction 546, the wetarea of, the wafer surface enter the process window 538-1 through theleading edge region 548. Then after processing of the wet region of thewafer surface by the meniscus that is generated and controllablymaintained and managed by the process window 538-1, the wet region isdried and the dried region of the wafer (or substrate) leaves theprocess window 538-1 through a trailing edge region 560 of the proximityhead 106. As discussed in reference to FIGS. 9A through 9D, the processwindow 538-1 may be any suitable shape such as, for example,rectangular, square, circular, oval, semi-circular, etc.

FIG. 10B shows processing regions 540, 542, and 544 of a proximity head106 in accordance with one embodiment of the present invention. In oneembodiment, the processing regions 540, 542, and 544 (the regions beingshown by the broken lines) make up the processing window as discussed inreference to FIG. 10A. It should be appreciated that the processingregions 540, 542, and 544 may be any suitable size and/or shape such as,for example, circular, ring, semi-circular, square, semi-square, freeform, etc. as long as a stable and controllable fluid meniscus can begenerated that can apply and remove fluids from a surface in anefficient manner. In one embodiment, the processing region 540 includesthe plurality of source inlets 302, the processing region 542 (alsoknown as a vacuum ring) includes the plurality of source outlets 304,and the processing region 544 includes the plurality of source inlets306. In a preferable embodiment, the region 542 surrounds (orsubstantially surrounds) the region 544 with a ring of source outlets304 (e.g., a vacuum ring). The region 540 substantially surrounds theregion 544 but has an opening 541 where, there are no source inlets 302exist on a leading edge side of the process window 538-1. In yet anotherembodiment, the region 540 forms a semi-enclosure around the region 542.The opening in the semi-enclosure leads in the direction of thescanning/processing by the head 106. Therefore, in one embodiment, theproximity head 106 can supply a first fluid to a first region of thewafer surface from the region 544 and surround the first region of thewafer with a vacuum region using the region 542. The proximity head 106can also semi-enclose the vacuum region with an applied surface tensionreducing fluid applied from the region 540. In such as embodiment, thesemi-enclosing generates an opening that leads to the vacuum region.

Therefore, in operation, the proximity head 106 generates a fluidmeniscus by application of a vacuum and DIW in the respective regions540, 542 in the process window 538 (as shown in FIG. 10A). IPA vaporcarried on a carrier gas (e.g., N₂) can be added as necessary in therespective region 544 (e.g., to aid in moving the formed meniscus). Whenthe proximity head 106 is moving over the wafer surface in an exemplarydrying operation, the wafer surface that moves through the opening 541in the region 542 and contacts the meniscus 116 within the processwindow 538 is dried. The drying occurs because fluid that is on thatportion of the wafer surface that contacts the meniscus 116 is removedas the meniscus moves over the surface. Therefore, wet surfaces of awafer may enter the process window 538 through the opening 541 in theregion 540 and by contacting the fluid meniscus may undergo a dryingprocess.

It should be appreciated that although the plurality of source inlets302, the plurality of source inlets 306, and the plurality of sourceoutlets 304 are shown in this embodiment, other embodiments may beutilized where any suitable number of the source inlets 302, the sourceinlets 306, and the source outlets 304 may be utilized as long as theconfiguration and number of the plurality of source inlets 302, thesource inlets 306, and the source outlets 306 may generate a stable,controllable fluid meniscus that can dry a surface of a substrate.

FIGS. 11 through 14 illustrate exemplary embodiments of the proximityhead 106. It should be appreciated any of the different embodiments ofthe proximity head 106 described may be used as one or both of theproximity heads 106 a and 106 b described above in reference to FIGS. 2Athrough 5H. As shown by the exemplary figures that follow, the proximityhead may be any suitable configuration or size that may enable the fluidremoval process as described in FIGS. 6 to 10. Therefore, any, some, orall of the proximity heads described herein may be utilized in anysuitable wafer cleaning and drying system such as, for example, thesystem 100 or a variant thereof as described in reference to FIGS. 2A to2D. In addition, the proximity head may also have any suitable numbersor shapes of source outlets 304 and source inlets 302 and 306. It shouldbe appreciated that the side of the proximity heads shown from a topview is the side that comes into close proximity with the wafer toconduct wafer processing. All of the proximity heads described in FIGS.11 through 14 are manifolds that enable usage of the IPA-vacuum-DIWorientation in a process window or a variant thereof as described abovein reference to FIGS. 2 through 10. The embodiments of the proximityhead 106 as described below in reference to FIGS. 11 through 14 all haveembodiments of the process window 538, and regions 540, 542, and 544 asdescribed in reference to FIGS. 9A through 10B above. In addition, theproximity heads described herein may be utilized for either cleaning ordrying operations depending on the fluid that is inputted and outputtedfrom the source inlets 302 and 306, and the source outlets 304. Inaddition, the proximity heads described herein may have multiple inletlines and multiple outlet lines with the ability to control the relativeflow rates of liquid and/or vapor and/or gas through the outlets andinlets. It should be appreciated that every group of source inlets andsource outlets can have independent control of the flows.

It should be appreciated that the size as well as the locations of thesource inlets and outlets may be varied as long as the meniscus producedis stable. In one embodiment, the size of the openings to source inlets302, source outlets 304, and source inlets 306 are between about 0.02inch and about 0.25 inch in diameter. In a preferable embodiment, thesize of the openings of the source inlets 306 and the source outlets 304is about 0.06 inch, and the size of the openings of the source inlets362 is about 0.03 inch.

In one embodiment the source inlets 302 and 306 in addition to thesource outlets 304 are spaced about 0.03 inch and about 0.5 inch apart.In a preferable embodiment, the source inlets 306 are spaced 0.125 inchapart from each other and the source outlets 304 are spaced 0.125 inchapart and the source inlets 302 are spaced about 0.06 inch apart. In oneembodiment, the source inlets 302 the source outlets 304 the may becombined in the form of one or more slots or channels rather thanmultiple openings. By way of example, the vacuum inlets 304 can becombined in the form of one or more channels that at least partiallysurrounds the area of the source outlets 306 for the fluid portion ofthe meniscus. Similarly, the IPA outlets 302 can be combined into one ormore channels that at lie outside the area of the vacuum inlets 304. Thesource outlets 306 can also be combined into one or more channels.

Additionally, the proximity heads may not necessarily be a “head” inconfiguration but may be any suitable configuration, shape, and/or sizesuch as, for example, a manifold, a circular puck, a bar, a square, atriangle, an oval puck, a tube, plate, etc., as long as the sourceinlets 302, and 306, and the source outlets 304 may be configured in amanner that would enable the generation of a controlled, stable,manageable fluid meniscus. Multiple meniscuses can be supportedsimultaneously on the wafer. By way of example, a single proximity headcan include sufficient source inlets 302, and 306, and the sourceoutlets 304 such that the single proximity head can support the multiplemeniscuses. Alternatively, multiple proximity heads can be used incombination, where each proximity head supports one or more meniscuses.Each of the multiple meniscuses can simultaneously perform separateprocesses (e.g., etch, rinse and drying processes). In a preferableembodiment, the proximity head may be a type of manifold as described inreference to FIGS. 10A through 14C. The size of the proximity heads maybe varied to any suitable size depending on the application desired. Inone embodiment, the length (from a top view showing the process window)of the proximity heads may be between 1.0 inch to about 18.0 inches andthe width (from a top view showing the process window) may be betweenabout 0.5 inch to about 6.0 inches. Also when the proximity head may beoptimized to process any suitable size of wafers such as, for example,200 mm wafers, 300, wafers, etc. The process windows of the proximityheads may be arranged in any suitable manner as long as such aconfiguration may generate a controlled stable and manageable fluidmeniscus.

FIG. 11A shows a top view of a proximity head 106-1 with a substantiallyrectangular shape in accordance with one embodiment of the presentinvention. In this embodiment, the proximity head 106-1 includes threeof the source inlets 302 which, in one embodiment, apply IPA to asurface of the wafer 108.

In this embodiment, the source inlets 302 are capable of applying IPAtoward a wafer surface region, the source inlets 306 are capable ofapplying DIW toward the wafer surface region, and the source outlets 304are capable of applying vacuum to a region in close proximity of asurface of the wafer 108. By the application of the vacuum, the IPA,DIW, and any other type of fluids that may reside on a wafer surface maybe removed.

The proximity head 106-1 also includes ports 342 a, 342 b, and 342 cthat, in one embodiment, correspond to the source inlet 302, sourceoutlet 304, and source inlet 306 respectively. By inputting or removingfluid through the ports 342 a, 342 b, and 342 c, fluids may be inputtedor outputted through the source inlet 302, the source outlet 304, andthe source inlet 306. Although the ports 342 a, 342 b, and 342 ccorrespond with the source inlet 302, the source outlet 304, and thesource inlet 306 in this exemplary embodiment, it should be appreciatedthat the ports 342 a, 342 b, and 342 c may supply or remove fluid fromany suitable source inlet or source outlet depending on theconfiguration desired. Because of the configuration of the source inlets302 and 306 with the source outlets 304, the meniscus 116 may be formedbetween the proximity head 106-1 and the wafer 108. The shape of themeniscus 116 may vary depending on the configuration and dimensions ofthe proximity head 106-1.

It should be appreciated that the ports 342 a, 342 b, and 342 c for anyof the proximity heads described herein may be any suitable orientationand dimension as long as a stable meniscus can be generated andmaintained by the source inlets 302, source outlets 304, and sourceinlets 306. The embodiments of the ports 342 a, 342 b, and 342 cdescribed herein may be applicable to any of the proximity headsdescribed herein. In one embodiment, the port size of the ports 342 a,342 b, and 342 c may be between about 0.03 inch and about 0.25 inch indiameter. In a preferable embodiment, the port size is about 0.06 inchto 0.18 inch in diameter. In one embodiment, the distance between theports is between about 0.125 inch and about 1 inch apart. In apreferable embodiment, the distance between the ports is between about0.25 inch and about 0.37 inch apart.

FIG. 11B illustrates a side view of the proximity head 106-1 inaccordance with one embodiment of present invention. The proximity head106-1 includes the ports 342 a, 342 b, and 342 c. In one embodiment, theports 342 a, 342 b, and 342 c feed source inlets 302, source outlets304, and the source inlets 306 respectively. It should be understoodthat the ports may be any suitable number, size, or shape as long as thesource inlets 302 and 306 as well as source outlets 304 may be utilizedto generate, maintain, and manage the meniscus 116.

FIG. 11C shows a rear view of the proximity head 106-1 in accordancewith one embodiment of the present invention. The rear view of theproximity head 106-1, in one embodiment, corresponds to the leading edge548 of the proximity head 106-1. It should be appreciated that theproximity head 106-1 is exemplary in nature and may be any suitabledimension as long as the source inlets 302 and 306 as well as the sourceoutlet 304 are configured in a manner to enable cleaning and/or dryingof the wafer 108 in the manner described herein. In one embodiment, theproximity head 106-1 includes the input ports 342 c which may feed fluidto at least some of the source inlets 302 a which run parallel to theinput ports 342 c shown in FIG. 11C.

FIG. 12A shows a proximity head 106-2 with a partial rectangular andpartial circular shape in accordance with one embodiment of the presentinvention. In this embodiment, the proximity head 106-2 includes one rowof source inlets 306 that is adjacent on both sides to rows of sourceoutlets 304. One of the rows of source outlets 304 is adjacent to tworows of source inlets 302. Perpendicular to and at the ends of the rowsdescribed above are rows of source outlets 304.

FIG. 12B shows a side view of the proximity head 106-2 with a partialrectangular and partial circular shape in accordance with one embodimentof the present invention. In one embodiment, the proximity head 106-2includes ports 342 a, 342 b, and 342 c on a side of the proximity head106-2. The ports 342 a, 342 b, and 342 c may be utilized to input and/oroutput fluids through the source inlets 302 and 306 and the sourceoutlets 304. In one embodiment, the ports 342 a, 342 b, and 342 ccorrespond to the source inlets 302, the source outlets 304, and thesource inlets 306 respectively.

FIG. 12C shows a back view of the proximity head 106-2 with a partialrectangular and partial circular shape in accordance with one embodimentof the present invention. The back side as shown by the rear view iswhere the back side is the square end of the proximity head 106-2.

FIG. 13A shows a rectangular proximity head 106-3 in accordance with oneembodiment of the present invention. In one embodiment, the proximityhead 106-3 includes a configuration of source inlets 302 and 306 andsource outlets 304′ that is similar to the proximity head 106-1 asdiscussed in reference to FIG. 11A. The rectangular proximity head 106-3includes the source outlets 304′ that are larger in diameter than thesource outlets 304. In any of the proximity heads described herein, thediameter of the source inlets 302 and 306 as well as the source outlets304 may be altered so meniscus generation, maintenance, and managementmay be optimized. In this embodiment, the source inlets 302 are capableof applying IPA toward a wafer surface region, the source inlets 306 arecapable of applying DIW toward the wafer surface region, and the sourceoutlets 304 are capable of applying vacuum to a region in closeproximity of a surface of the wafer 108. By the application of thevacuum, the IPA, DIW, and any other type of fluids that may reside on awafer surface may be removed.

The proximity head 106-3 also includes ports 342 a, 342 b, and 342 cthat, in one embodiment, correspond to the source inlet 302, sourceoutlet 304, and source inlet 306 respectively. By inputting or removingfluid through the ports 342 a, 342 b, and 342 c, fluids may be inputtedor outputted through the source inlet 302, the source outlet 304, andthe source inlet 306. Although the ports 342 a, 342 b, and 342 ccorrespond with the source inlet 302, the source outlet 304, and thesource inlet 306 in this exemplary embodiment, it should be appreciatedthat the ports 342 a, 342 b, and 342 c may supply or remove fluid fromany suitable source inlet or source outlet depending on theconfiguration desired. Because of the configuration of the source inlets302 and 306 with the source outlets 304, the meniscus 116 may be formedbetween the proximity head 106-1 and the wafer 108. The shape of themeniscus 116 may vary depending on the configuration and dimensions ofthe proximity head 106-1.

It should be appreciated that the ports 342 a, 342 b, and 342 c for anyof the proximity heads described herein may be any suitable orientationand dimension as long as a stable meniscus can be generated andmaintained by the source inlets 302, source outlets 304, and sourceinlets 306. The embodiments of the ports 342 a, 342 b, and 342 cdescribed in relation to the proximity head 106-1 may be applicable toany of the proximity heads described in reference to the other Figures.In one embodiment, the port size of the ports 342 a, 342 b, and 342 cmay be between about 0.03 inch and about 0.25 inch in diameter. In apreferable embodiment, the port size is about 0.06 inch to 0.18 inch indiameter. In one embodiment, the distance between the ports is betweenabout 0.125 inch and about 1 inch apart. In a preferable embodiment, thedistance between the ports is between about 0.25 inch and about 0.37inch apart.

FIG. 13B shows a rear view of the proximity head 106-3 in accordancewith one embodiment of the present invention. The rear view of theproximity head 106-3, in one embodiment, corresponds to the leading edge548 of the proximity head 106-3. It should be appreciated that theproximity head 106-3 is exemplary in nature and may be any suitabledimension as long as the source inlets 302 and 306 as well as the sourceoutlet 304 are configured in a manner to enable cleaning and/or dryingof the wafer 108 in the manner described herein. In one embodiment, theproximity head 106-3 includes the input ports 342 c which may feed fluidto at least some of the source inlets 302 a which run parallel to theinput ports 342 c shown in FIG. 13A.

FIG. 13C illustrates a side view of the proximity head 106-3 inaccordance with one embodiment of present invention. The proximity head106-3 includes the ports 342 a, 342 b, and 342 c. In one embodiment, theports 342 a, 342 b, and 342 c feed source inlets 302, source outlets304, and the source inlets 306 respectively. It should be understoodthat the ports may be any suitable number, size, or shape as long as thesource inlets 302 and 306 as well as source outlets 304 may be utilizedto generate, maintain, and manage the meniscus 116.

FIG. 14A shows a rectangular proximity head 106-4 in accordance with oneembodiment of the present invention. In one embodiment, the proximityhead 106-4 includes a configuration of source inlets 302 and 306 andsource outlets 304′ that is similar to the proximity head 106-3 asdiscussed in reference to FIG. 13A. The rectangular proximity head 106-3includes the source outlets 304′ that are larger in diameter than thesource outlets 304. In any of the proximity heads described herein, thediameter of the source inlets 302 and 306 as well as the source outlets304 may be altered so meniscus generation, maintenance, and managementmay be optimized. In one embodiment, the source outlets 304′ are locatedcloser to the source inlets 302 than the configuration discussed inreference to FIG. 13A. With this type of configuration, a smallermeniscus may be generated. The region spanned by the source inlets 302,306 and source outlets 304′ (or also source outlets 304 as described inreference to FIG. 11A) may be any suitable size and/or shape. In oneembodiment, the process window may be between about 0.03 square inchesto about 9.0 square inches. In a preferable embodiment, the processwindow may be about 0.75. Therefore, by adjusting the region of the Inthis embodiment, the source inlets 302 are capable of applying IPAtoward a wafer surface region, the source inlets 306 are capable ofapplying DIW toward the wafer surface region, and the source outlets 304are capable of applying vacuum to a region in close proximity of asurface of the wafer 108. By the application of the vacuum, the IPA,DIW, and any other type of fluids that may reside on a wafer surface maybe removed.

The proximity head 106-3 also includes ports 342 a, 342 b, and 342 cthat, in one embodiment, correspond to the source inlet 302, sourceoutlet 304, and source inlet 306 respectively. By inputting or removingfluid through the ports 342 a, 342 b, and 342 c, fluids may be inputtedor outputted through the source inlet 302, the source outlet 304, andthe source inlet 306. Although the ports 342 a, 342 b, and 342 ccorrespond with the source inlet 302, the source outlet 304, and thesource inlet 306 in this exemplary embodiment, it should be appreciatedthat the ports 342 a, 342 b and 342 c may supply or remove fluid fromany suitable source inlet or source outlet depending on theconfiguration desired. Because of the configuration of the source inlets302 and 306 with the source outlets 304, the meniscus 116 may be formedby the process window between the proximity head 106-1 and the wafer108. The shape of the meniscus 116 may correspond with the shape of theprocess window and therefore the size and shape of the meniscus 116 maybe varied depending on the configuration and dimensions of the regionsof source inlets 302 and 306 and regions of the source outlets 304.

FIG. 14B shows a rear view of the rectangular proximity head 106-4 inaccordance with one embodiment of the present invention. The rear viewof the proximity head 106-4, in one embodiment, corresponds to theleading edge 548 of the proximity head 106-4. It should be appreciatedthat the proximity head 106-4 is exemplary in nature and may be anysuitable dimension as long as the source inlets 302 and.306 as well asthe source outlet 304 are configured in a manner to enable cleaningand/or drying of the wafer 108 in the manner described herein. In oneembodiment, the proximity head 106-4 includes the input ports 342 cwhich may feed fluid to at least some of the source inlets 302 a whichrun parallel to the input ports 342 c shown in FIG. 13A.

FIG. 14C illustrates a side view of the rectangular proximity head 106-4in accordance with one embodiment of present invention. The proximityhead 106-4 includes the ports 342 a, 342 b, and 342 c. In oneembodiment, the ports 342 a, 342 b, and 342 c feed source inlets 302,source outlets 304, and the source inlets 306 respectively. It should beunderstood that the ports may be any suitable number, size, or shape aslong as the source inlets 302 and 306 as well as source outlets 304 maybe utilized to generate, maintain, and manage the meniscus 116.

FIG. 15A shows a proximity head 106 in operation according to oneembodiment of the present invention. It should be appreciated that theflow rate of the DIW and the N₂/IPA, the magnitude of the vacuum, androtation/movement of the wafer being processed may be varied in anysuitable manner to provide optimal fluid meniscus controllability andmanagement to generate enhanced wafer processing. The proximity head106, in one exemplary embodiment, is utilized in a configuration asdescribed in reference to FIG. 2A. As shown in reference to FIGS. 15Athrough 15F, the wafer is a clear material so fluid meniscus dynamicscan be seen with different flow rates, vacuum rates, and waferrotations. The flow rate of DIW arid N₂/IPA as well as the vacuum androtation of the wafer may be varied depending on the conditionsencountered during drying. In FIG. 15A, the meniscus has been formed byinput of DIW and vacuum without any N₂/IPA flow. Without the N₂/IPAflow, the meniscus has an uneven boundary. In this embodiment, the waferrotation is zero and the DIW flow rate is 500 ml/min.

FIG. 15B illustrates the proximity head 106 as described in FIG. 15Awith N₂/IPA input in accordance with one embodiment of the presentinvention. In this embodiment, the DIW flow rate is 500 ml/min and theN₂/IPA flow rate is 12 ml/min with the rotation of the wafer being zero.As shown by FIG. 15B, the usage of N₂/IPA flow has made the boundary ofthe meniscus more even. Therefore, the fluid meniscus is more stable andcontrollable.

FIG. 15C shows the proximity head 106 as described in FIG. 15B, but withthe N₂/IPA flow increased to 24 ml/min in accordance with one embodimentof the present invention. The rotation has been kept at zero and theflow rate of the DIW is 500 ml/min. When the N₂/IPA flow rate is toohigh, the fluid meniscus becomes deformed and less controllable.

FIG. 15D shows the proximity head 106 where the fluid meniscus is shownwhere the wafer is being rotated in accordance with one embodiment ofthe present invention. In this embodiment, the rotation of the wafer isabout 3 rotations per minute. The flow rate of the DIW is 500 ml/minwhile the flow rate of the N₂/IPA is 12 SCFH. The magnitude of thevacuum is about 30 in Hg@80 PSIG. When the wafer is rotated, the fluidmeniscus becomes less stable due to the added wafer dynamics as comparedwith FIG. 15C which shows the same DIW and N₂/IPA flow rate but withoutwafer rotation.

FIG. 15E shows the proximity head 106 where the fluid meniscus is shownwhere the wafer is being rotated faster than the rotation shown in FIG.15D in accordance with one embodiment of the present invention. In thisembodiment, the rotation of the wafer is about 4.3 rotations per minute.The flow rate of the DIW is 500 ml/min while the flow rate of the IPA is12 SCFH. The magnitude of the vacuum is about 30 on Hg@80 PSIG. When thewafer is rotated faster, the fluid meniscus has a more uneven boundaryas compared to the fluid meniscus discussed in reference to FIG. 15D dueto the added wafer dynamics as compared.

FIG. 15F shows the proximity head 106 where the N₂/IPA flow has beenincreased as compared to the IPA flow of FIG. 15D in accordance with oneembodiment of the present invention. In this embodiment, the variablessuch as the DIW flow rate, rate of wafer rotation, and vacuum magnitudeare the same as that described in reference to FIG. 15D. In thisembodiment, the N₂/IPA flow rate was increased to 24 SCFH. With theN₂/IPA flow rate increased, the IPA holds the fluid meniscus along theborder to generate a highly controllable and manageable fluid meniscus.Therefore, even with wafer rotation, the fluid meniscus looks stablewith a consistent border that substantially corresponds to the regionwith the plurality of source inlets 302 and the region with theplurality of source outlets 304. Therefore, a stable and highlycontrollable, manageable, and maneuverable fluid meniscus is formedinside of the process window so, in an exemplary drying process, fluidthat the proximity head 106 may encounter on a wafer surface is removedthereby quickly and efficiently drying the wafer surface.

While the various embodiments of proximity heads described in FIGS.6A-15F above are very useful in processing each surface of a substratesuch as a semiconductor wafer, the proximity heads cannot easily supporta processing meniscus on the edge of the substrate. FIGS. 16A-16E showvarious aspects of an edge process system 1600 in accordance with oneembodiment of the present invention.

FIG. 16A shows a layout view of the edge processing system 1600, inaccordance with one embodiment of the present invention. FIG. 16B showsa side view of the edge processing system 1600, in accordance with oneembodiment of the present invention. The edge processing system 1600includes a wafer support system that can include multiple wafer edgerollers 102A, 102B, 102C, for supporting a wafer 108. The wafer supportsystem can also allow the wafer to move (e.g., rotate) relative to anedge processing proximity head 1650. The edge processing proximity head1650 is supported and can be moved by a head support 1652. Supportingthe edge processing proximity head 1650 can also include supplying thevarious requirements of the various ports 1602A, 1602B, 1604A, 1604B,1606A in the proximity head 1650 as will be described in more detailbelow. As a result, the head support 1652 can include tubes and othersupply lines 1654 for supplying the various requirements of the variousports 1602A, 1602B, 1604A, 1604B, 1606A in the proximity head. 1650.

The edge processing system 1600 also includes an edge controller forcontrolling the edge process. By way of example, the edge controller cancontrol the rotational speed of the wafer, the chemistry in theprocessing meniscus 1610, the size and location of the processingmeniscus 1610 within the proximity head 1650, the location and movementof the proximity head 1650 relative to the wafer 108 and the variouspressures and flowrates applied to each of the various ports1602A-1602H, 1604A-1604E, 1606A-1606B included in the proximity head1650.

FIGS. 16C and 16D show a cutaway side view of the edge process proximityhead 1650 in accordance with one embodiment of the present invention.Similar to the proximity heads described in FIGS. 6A-15F above, the edgeprocess proximity head 1650 includes an arrangement of ports1602A-1602H, 1604A-1604E, 1606A-1606B to create and support a processingmeniscus 1610. In one embodiment, the ports 1606A-1606B inject a processchemistry (e.g., deionized water, etching chemistries, liquid, andcombinations thereof, etc.) while vacuum ports 1604A-1604E remove theexcess liquid from the meniscus 1610. IPA ports 1602A-1602H can injectIPA or other chemistries to aid in controlling the surface tension ofthe meniscus 1610.

The various ports 1602A-1602H, 1604A-1604E, 1606A-1606B can also becontrolled according to the location of the trailing edge of themeniscus. The meniscus 1610 can be supported by the edge processproximity head 1650 sufficiently deep enough that the edge region 1616and the edge exclusion zones 1618A, 1618B can be fully encompassed bythe meniscus, such as shown in FIG. 16D. By way of example, in FIG. 16Dthe wafer 108 is shown being moved in direction 1622 to insert the waferinto the meniscus 1610 until the edge region 1616 and the edge exclusionzones 1618A, 1618B are included within the meniscus forming two separatemeniscus surfaces 1610A, 1610B. Surface 1610A is formed between the topsurface of the wafer 108 and the top inside surface of the edge processproximity head 1650. Similarly, surface 1610B is formed between thebottom surface of the wafer 108 and the bottom inside surface of theedge process proximity head 1650.

As the wafer 108 is moved out of the meniscus surfaces 1610A, 1610B(e.g., as the wafer is moved in direction 1620), IPA can be injectedthrough ports 1602A, 1602B to control the surface tension of thetrailing edge of the meniscus surfaces 1610A, 1610B. Controlling thesurface tension of the trailing edge of the surfaces 1610A, 1610B canhelp ensure the meniscuses dry (i.e., remove the process chemistry) theedge region 1616 and edge exclusion zones 1618A, 1618B as the trailingedge draws across the edge exclusion zones and the edge region.

FIG. 16E shows a 16E-16E sectional view of edge process proximity head1650, in accordance with one embodiment of the present invention. Whileonly one half of edge process proximity head 1650 is shown, the opposingportion is substantially similar, however, in some embodiments, the portarrangements may be adjusted as required to support meniscuses acrossdifferent width exclusion zones. By way of example, a bottom side edgeexclusion zone 1618B may be as much as about 5 mm or more is width,where the top side edge exclusion zone 1618A may be less than about 2mm. As a result, locations of the ports 1602B-F and 1604B-D may beadjusted relative to the edge of the wafer 108 as required.

As the wafer 108 moves (e.g., rotates) through the meniscus 1610 indirection 1624, meniscus trailing edge 1610D is formed. The injection ofN₂/IPA or other chemistries can be used to control and maintain thesurface tension of the trailing edge of the meniscus 1610D.

The volume of the meniscus 1610 can also be manipulated to cause themeniscus to extend or retract toward and onto or off of and away fromthe wafer 108. The meniscus 1610 can have a width W of between about 2mm and about 15 mm. The width of the meniscus 1610 can also be extendedin the arc around the circumference of wafer 108 through use of more orfewer ports 1602A-16-2H, 1604A-1604E, 1606A-1606B. A meniscus 1610having a larger arc can also provide greater resonance time on eachincremental area of the edge region 1616 and edge exclusion zones 1618A,1618B. Multiple edge process proximity heads 1650 can also used incombination to allow multiple processes to be accomplished substantiallysimultaneously, on a single wafer 108. One or more edge processproximity heads 600 can also be combined with one or more proximityheads described in FIGS. 2A-15F above.

While described in terms of processing an edge of a wafer 108, the edgeprocess proximity head 1650 can also be adapted to process a straightedge of a substrate having straight edges. In such an embodiment, theedge process proximity head 1650 can move a meniscus along a straightedge of the substrate and process the regions of the substrate that arein close proximity to the edge of the substrate similar to processingthe edge region 1616 and edge exclusion zones 1618A of wafer 108described above.

While the above-described systems, apparatus and methods may bedescribed in terms of various drying processes, it should be understoodthat other processes can also be encompassed within the scope of thepresent invention. The other processes can include etching processes,rinsing processes and other applicable processes. As used herein inconnection with the description of the invention, the term “about” means+/−20%. By way of example, the phrase “about 700 micro” indicates arange of between 560 micro and 840 micro. It will be further appreciatedthat the instructions represented by the operations in FIG. 5N-1 are notrequired to be performed in the order illustrated, and that all theprocessing represented by the operations may not be necessary topractice the invention.

Although the foregoing invention has been described in some detail forpurposes of clarity of understanding, it will be apparent that certainchanges and modifications may be practiced within the scope of theappended claims. Accordingly, the present embodiments are to beconsidered as illustrative and not restrictive, and the invention is notto be limited to the details given herein, but may be modified withinthe scope and equivalents of the appended claims.

1. A system for moving a meniscus comprising: a first surface; a secondsurface being substantially co-planar with the first surface; aproximity head having a proximity head surface including: a plurality ofsource inlets for delivering a quantity of liquid to a liquid meniscus;and a plurality of source outlets for removing at least a portion of thequantity of liquid from the liquid meniscus; and an actuator coupled tothe proximity head wherein the actuator moves the proximity head in afirst direction substantially parallel to the first surface and thesecond surface, wherein the proximity head forms the liquid meniscusbetween the proximity head surface and at least one of the first surfaceor the second surface.
 2. The system of claim 1, wherein the actuatormoves the proximity head in a second direction substantiallyperpendicularly toward the first surface and the second surface.
 3. Thesystem of claim 1, wherein the plurality of source outlets includes atleast one surface tension control port.
 4. The system of claim 1,wherein the first surface includes an edge platform and the secondsurface is a substrate.
 5. The system of claim 1, wherein the edgeplatform substantially surrounds the substrate.
 6. The system of claim1, wherein the head is wider than a diameter of the substrate.
 7. Thesystem of claim 1, wherein the head is wider than a radius of thesubstrate.
 8. The system of claim 1, wherein the second surface isseparated from the first surface by a gap.
 9. The system of claim 1,wherein the second surface is moving relative to the first surface. 10.The system of claim 1, wherein the second surface is rotating relativeto the first surface.
 11. The system of claim 1, wherein the proximityhead surface includes a first material and the first surface includes asecond material, the first material having a different hydrophilicproperty than the second material.
 12. The system of claim 11, whereinthe second surface includes a third material having a differenthydrophilic property than at least one of the first material and thesecond material.
 13. The system of claim 1, wherein the second surfaceis a substrate including a circumferential edge and wherein the aproximity head surface includes a concave portion, the concave portioncapable of receiving a portion of the circumferential edge of thesubstrate, wherein the proximity head is capable of forming the fluidmeniscus within the concave portion.
 14. A system for moving a meniscuscomprising: an edge platform; a substrate being substantially co-planarwith the edge platform, the edge platform being separated from thesubstrate by a gap; a proximity head having a bottom surface including:a plurality of source inlets for delivering a quantity of liquid to aliquid meniscus; a plurality of source outlets for removing at least aportion of the quantity of liquid from the liquid meniscus; and at leastone surface tension control port; and an actuator coupled to theproximity head and wherein the actuator moves the proximity head in afirst direction substantially parallel to the edge platform and thesubstrate, wherein the proximity head forms the liquid meniscus betweenthe bottom surface of the proximity head and at least one of the edgeplatform or the substrate.
 15. A system for moving a meniscus onto anedge of a substrate comprising: a substrate including a circumferentialedge; a proximity head having a concave portion, the concave portioncapable of receiving a portion of the circumferential edge of thesubstrate, the concave portion including: a plurality of source inletsfor delivering a quantity of liquid to a liquid meniscus; and aplurality of source outlets for removing at least a portion of thequantity of liquid from the liquid meniscus, wherein the proximity headforms the liquid meniscus within the concave portion of the proximityhead.
 16. The system of claim 15, wherein the plurality of sourceoutlets includes at least one surface tension control port.
 17. Thesystem of claim 15, wherein the concave portion is formed in an arcaround at least a portion of the circumference of the substrate.
 18. Thesystem of claim 15, further comprising an actuator coupled to at leastone of the substrate and the proximity head, wherein the actuator movesthe liquid meniscus onto the portion of the circumferential edge of thesubstrate such that a leading edge of the meniscus is split in to afirst leading edge and a second leading edge, the first leading edgebeing supported between a top surface of the substrate and correspondingtop inside surface of the concave portion of the proximity head, thesecond leading edge being supported between a bottom surface of thesubstrate and corresponding bottom inside surface of the concave portionof the proximity head.
 19. The system of claim 15, wherein the meniscusencompasses at least one of a top surface edge exclusion zone and abottom surface edge exclusion zone.
 20. The system of claim 15, furthercomprising a substrate support capable of moving the edge of thesubstrate relative to the proximity head such that the meniscus is movedalong the edge of the substrate.